Method for forming a titanium-germanium contact layer for thermostabilization of transistors
Objective. The objective of the study is to obtain high-quality and reproducible electrophysical parameters of thin-film metal layers, the formation technology of which determines the reliability and quality of microelectronic products – silicon transistors.Methods. A method for forming a two-layer...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Dagestan State Technical University
2021-01-01
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| Series: | Вестник Дагестанского государственного технического университета: Технические науки |
| Subjects: | |
| Online Access: | https://vestnik.dgtu.ru/jour/article/view/876 |
| Summary: | Objective. The objective of the study is to obtain high-quality and reproducible electrophysical parameters of thin-film metal layers, the formation technology of which determines the reliability and quality of microelectronic products – silicon transistors.Methods. A method for forming a two-layer titanium-germanium metallization to create a contact and remove heat from the collector junction of high-power semiconductor transistors on the reverse side of plates with formed structures is proposed. The proposed method ensures the quality of the soldered connection and thermal stabilization of semiconductor devices, increasing the reliability of the studied devices in radio electronic equipment systems.Results. This combination of sprayed metals provides a reliable contact to the collector area when the crystal is placed on the base of the case, which reduces the resistance of the ohmic transition and increases the output of suitable devices.Conclusion. Based on the results of experimental procedures, the optimal thicknesses of metal layers deposited on the reverse side of transistor crystals were obtained during the formation of metallization to fit crystals on the base of the case. The Ti-Ge system stability is studied. The technical result of the research is to improve the quality of planting by obtaining a uniform distribution of the Ti-Ge layer in a single technological cycle at a given temperature with a certain thickness for each metal separately. |
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| ISSN: | 2073-6185 2542-095X |