Method for forming a titanium-germanium contact layer for thermostabilization of transistors
Objective. The objective of the study is to obtain high-quality and reproducible electrophysical parameters of thin-film metal layers, the formation technology of which determines the reliability and quality of microelectronic products – silicon transistors.Methods. A method for forming a two-layer...
Main Authors: | T. A. Ismailov, A. R. Shakhmayeva, Sh. A. Yusufov, E. Kazalieva |
---|---|
Format: | Article |
Language: | Russian |
Published: |
Dagestan State Technical University
2021-01-01
|
Series: | Вестник Дагестанского государственного технического университета: Технические науки |
Subjects: | |
Online Access: | https://vestnik.dgtu.ru/jour/article/view/876 |
Similar Items
-
Improving the thermal properties of the device in the process of forming a contact with the collector region of a silicon transistor
by: E. Kazalieva, et al.
Published: (2022-11-01) -
THERMOELECTRIC SEMICONDUCTOR DEVICES FOR THERMAL STABILISATION OF REA POWERFUL TRANSISTORS
by: T. A. Ismailov, et al.
Published: (2020-04-01) -
TECHNOLOGY OF MANUFACTURING OF TRANSISTOR STRUCTURES POWER ELECTRONICS
by: T. E. Sarkarov, et al.
Published: (2016-07-01) -
Thermal Spraying of Coatings on Aluminum Alloys of Combine Parts
by: M. S. Egorov, et al.
Published: (2022-09-01) -
THERMAL STABILIZATION OF OBJECTS USING SEMICONDUCTOR THERMOELECTRIC TRANSDUCERS
by: A. G. Mustafaev, et al.
Published: (2016-07-01)