Method for forming a titanium-germanium contact layer for thermostabilization of transistors

Method for forming a titanium-germanium contact layer for thermostabilization of transistors

Objective. The objective of the study is to obtain high-quality and reproducible electrophysical parameters of thin-film metal layers, the formation technology of which determines the reliability and quality of microelectronic products – silicon transistors.Methods. A method for forming a two-layer...

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Bibliographic Details
Main Authors: T. A. Ismailov, A. R. Shakhmayeva, Sh. A. Yusufov, E. Kazalieva
Format: Article
Language:Russian
Published: Dagestan State Technical University 2021-01-01
Series:Вестник Дагестанского государственного технического университета: Технические науки
Subjects:
titanium
germanium
solder
high-capacity semiconductor transistor
crystal
thermal stabilization
fusion point
sputtering
contact
Online Access:https://vestnik.dgtu.ru/jour/article/view/876

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