Terahertz nanospectroscopy of plasmon polaritons for the evaluation of doping in quantum devices

Terahertz (THz) waves are a highly sensitive probe of free carrier concentrations in semiconducting materials. However, most experiments operate in the far-field, which precludes the observation of nanoscale features that affect the material response. Here, we demonstrate the use of nanoscale THz pl...

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Main Authors: Guo Xiao, He Xin, Degnan Zachary, Chiu Chun-Ching, Donose Bogdan C., Bertling Karl, Fedorov Arkady, Rakić Aleksandar D., Jacobson Peter
Format: Article
Language:English
Published: De Gruyter 2023-04-01
Series:Nanophotonics
Subjects:
Online Access:https://doi.org/10.1515/nanoph-2023-0064
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author Guo Xiao
He Xin
Degnan Zachary
Chiu Chun-Ching
Donose Bogdan C.
Bertling Karl
Fedorov Arkady
Rakić Aleksandar D.
Jacobson Peter
author_facet Guo Xiao
He Xin
Degnan Zachary
Chiu Chun-Ching
Donose Bogdan C.
Bertling Karl
Fedorov Arkady
Rakić Aleksandar D.
Jacobson Peter
author_sort Guo Xiao
collection DOAJ
description Terahertz (THz) waves are a highly sensitive probe of free carrier concentrations in semiconducting materials. However, most experiments operate in the far-field, which precludes the observation of nanoscale features that affect the material response. Here, we demonstrate the use of nanoscale THz plasmon polaritons as an indicator of surface quality in prototypical quantum devices properties. Using THz near-field hyperspectral measurements, we observe polaritonic features in doped silicon near a metal-semiconductor interface. The presence of the THz surface plasmon polariton indicates the existence of a thin film doped layer on the device. Using a multilayer extraction procedure utilising vector calibration, we quantitatively probe the doped surface layer and determine its thickness and complex permittivity. The recovered multilayer characteristics match the dielectric conditions necessary to support the THz surface plasmon polariton. Applying these findings to superconducting resonators, we show that etching of this doped layer leads to an increase of the quality factor as determined by cryogenic measurements. This study demonstrates that THz scattering-type scanning near-field optical microscopy (s-SNOM) is a promising diagnostic tool for characterization of surface dielectric properties of quantum devices.
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spelling doaj.art-86b96986a99249dba94830c618b37e5f2023-05-29T09:46:24ZengDe GruyterNanophotonics2192-86142023-04-0112101865187510.1515/nanoph-2023-0064Terahertz nanospectroscopy of plasmon polaritons for the evaluation of doping in quantum devicesGuo Xiao0He Xin1Degnan Zachary2Chiu Chun-Ching3Donose Bogdan C.4Bertling Karl5Fedorov Arkady6Rakić Aleksandar D.7Jacobson Peter8School of Information Technology and Electrical Engineering, The University of Queensland, St Lucia, Brisbane, 4072, QLD, AustraliaSchool of Mathematics and Physics, The University of Queensland, St Lucia, Brisbane, 4072, QLD, AustraliaSchool of Mathematics and Physics, The University of Queensland, St Lucia, Brisbane, 4072, QLD, AustraliaSchool of Mathematics and Physics, The University of Queensland, St Lucia, Brisbane, 4072, QLD, AustraliaSchool of Information Technology and Electrical Engineering, The University of Queensland, St Lucia, Brisbane, 4072, QLD, AustraliaSchool of Information Technology and Electrical Engineering, The University of Queensland, St Lucia, Brisbane, 4072, QLD, AustraliaSchool of Mathematics and Physics, The University of Queensland, St Lucia, Brisbane, 4072, QLD, AustraliaSchool of Information Technology and Electrical Engineering, The University of Queensland, St Lucia, Brisbane, 4072, QLD, AustraliaSchool of Mathematics and Physics, The University of Queensland, St Lucia, Brisbane, 4072, QLD, AustraliaTerahertz (THz) waves are a highly sensitive probe of free carrier concentrations in semiconducting materials. However, most experiments operate in the far-field, which precludes the observation of nanoscale features that affect the material response. Here, we demonstrate the use of nanoscale THz plasmon polaritons as an indicator of surface quality in prototypical quantum devices properties. Using THz near-field hyperspectral measurements, we observe polaritonic features in doped silicon near a metal-semiconductor interface. The presence of the THz surface plasmon polariton indicates the existence of a thin film doped layer on the device. Using a multilayer extraction procedure utilising vector calibration, we quantitatively probe the doped surface layer and determine its thickness and complex permittivity. The recovered multilayer characteristics match the dielectric conditions necessary to support the THz surface plasmon polariton. Applying these findings to superconducting resonators, we show that etching of this doped layer leads to an increase of the quality factor as determined by cryogenic measurements. This study demonstrates that THz scattering-type scanning near-field optical microscopy (s-SNOM) is a promising diagnostic tool for characterization of surface dielectric properties of quantum devices.https://doi.org/10.1515/nanoph-2023-0064near-field optical microscopyterahertz nanospectroscopyterahertz polartionsthz s-snom
spellingShingle Guo Xiao
He Xin
Degnan Zachary
Chiu Chun-Ching
Donose Bogdan C.
Bertling Karl
Fedorov Arkady
Rakić Aleksandar D.
Jacobson Peter
Terahertz nanospectroscopy of plasmon polaritons for the evaluation of doping in quantum devices
Nanophotonics
near-field optical microscopy
terahertz nanospectroscopy
terahertz polartions
thz s-snom
title Terahertz nanospectroscopy of plasmon polaritons for the evaluation of doping in quantum devices
title_full Terahertz nanospectroscopy of plasmon polaritons for the evaluation of doping in quantum devices
title_fullStr Terahertz nanospectroscopy of plasmon polaritons for the evaluation of doping in quantum devices
title_full_unstemmed Terahertz nanospectroscopy of plasmon polaritons for the evaluation of doping in quantum devices
title_short Terahertz nanospectroscopy of plasmon polaritons for the evaluation of doping in quantum devices
title_sort terahertz nanospectroscopy of plasmon polaritons for the evaluation of doping in quantum devices
topic near-field optical microscopy
terahertz nanospectroscopy
terahertz polartions
thz s-snom
url https://doi.org/10.1515/nanoph-2023-0064
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