Magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor
We report a systemeatic investigation of magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor films by magneto-transport. Hall measurements showed a transition of the easy magnetization direction from in-plane to out-of plane with incorporation of the P into the GaMnAs films. Quanti...
| Main Authors: | , , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-05-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4972856 |
| _version_ | 1819263826961367040 |
|---|---|
| author | Hakjoon Lee Jihoon Chang Phunvira Chongthanaphisut Sangyeop Lee Seonghoon Choi Seul-Ki Bac Alviu R. Nasir Sanghoon Lee A. Pardo Sining Dong X. Li X. Liu J. K. Furdyna M. Dobrowolska |
| author_facet | Hakjoon Lee Jihoon Chang Phunvira Chongthanaphisut Sangyeop Lee Seonghoon Choi Seul-Ki Bac Alviu R. Nasir Sanghoon Lee A. Pardo Sining Dong X. Li X. Liu J. K. Furdyna M. Dobrowolska |
| author_sort | Hakjoon Lee |
| collection | DOAJ |
| description | We report a systemeatic investigation of magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor films by magneto-transport. Hall measurements showed a transition of the easy magnetization direction from in-plane to out-of plane with incorporation of the P into the GaMnAs films. Quantitative information on magnetic anisotropy of the films is obtained by fitting the angular dependence of Hall resistance data to magnetic free energy using the coherent rotation model. Values of magnetic anisotropy parameters show that in-plane anisotropy decreases and out-of-plane anisotropy increases with increasing P content in these films. The out-of-plane magnetic anisotropy in GaMnAsP layers is further enhanced by low temperature annealing. By optimizing the growth and annealing conditions, we were able to obtain a Curie temperature of 125 K in such quaternary films, with strong out-of-plane anisotropy. This study showed that the magnetic anisotropy of the GaMnAsP films can be controlled by adjusting the concentration of the P, and by appropriate post-growth annealing. |
| first_indexed | 2024-12-23T20:19:46Z |
| format | Article |
| id | doaj.art-86c08f2aa836442291c490563b62ce31 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-23T20:19:46Z |
| publishDate | 2017-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-86c08f2aa836442291c490563b62ce312022-12-21T17:32:35ZengAIP Publishing LLCAIP Advances2158-32262017-05-0175055809055809-610.1063/1.4972856016791ADVMagnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductorHakjoon Lee0Jihoon Chang1Phunvira Chongthanaphisut2Sangyeop Lee3Seonghoon Choi4Seul-Ki Bac5Alviu R. Nasir6Sanghoon Lee7A. Pardo8Sining Dong9X. Li10X. Liu11J. K. Furdyna12M. Dobrowolska13Physics Department, Korea University, Seoul 136-701, South KoreaPhysics Department, Korea University, Seoul 136-701, South KoreaPhysics Department, Korea University, Seoul 136-701, South KoreaPhysics Department, Korea University, Seoul 136-701, South KoreaPhysics Department, Korea University, Seoul 136-701, South KoreaPhysics Department, Korea University, Seoul 136-701, South KoreaPhysics Department, Korea University, Seoul 136-701, South KoreaPhysics Department, Korea University, Seoul 136-701, South KoreaPhysics Department, Universidad del Atlantico, Km 7 Antigua via a Puerto Colombia, Barranquilla, ColombiaDepartment of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USADepartment of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USADepartment of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USADepartment of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USADepartment of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USAWe report a systemeatic investigation of magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor films by magneto-transport. Hall measurements showed a transition of the easy magnetization direction from in-plane to out-of plane with incorporation of the P into the GaMnAs films. Quantitative information on magnetic anisotropy of the films is obtained by fitting the angular dependence of Hall resistance data to magnetic free energy using the coherent rotation model. Values of magnetic anisotropy parameters show that in-plane anisotropy decreases and out-of-plane anisotropy increases with increasing P content in these films. The out-of-plane magnetic anisotropy in GaMnAsP layers is further enhanced by low temperature annealing. By optimizing the growth and annealing conditions, we were able to obtain a Curie temperature of 125 K in such quaternary films, with strong out-of-plane anisotropy. This study showed that the magnetic anisotropy of the GaMnAsP films can be controlled by adjusting the concentration of the P, and by appropriate post-growth annealing.http://dx.doi.org/10.1063/1.4972856 |
| spellingShingle | Hakjoon Lee Jihoon Chang Phunvira Chongthanaphisut Sangyeop Lee Seonghoon Choi Seul-Ki Bac Alviu R. Nasir Sanghoon Lee A. Pardo Sining Dong X. Li X. Liu J. K. Furdyna M. Dobrowolska Magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor AIP Advances |
| title | Magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor |
| title_full | Magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor |
| title_fullStr | Magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor |
| title_full_unstemmed | Magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor |
| title_short | Magnetic anisotropy of quaternary GaMnAsP ferromagnetic semiconductor |
| title_sort | magnetic anisotropy of quaternary gamnasp ferromagnetic semiconductor |
| url | http://dx.doi.org/10.1063/1.4972856 |
| work_keys_str_mv | AT hakjoonlee magneticanisotropyofquaternarygamnaspferromagneticsemiconductor AT jihoonchang magneticanisotropyofquaternarygamnaspferromagneticsemiconductor AT phunvirachongthanaphisut magneticanisotropyofquaternarygamnaspferromagneticsemiconductor AT sangyeoplee magneticanisotropyofquaternarygamnaspferromagneticsemiconductor AT seonghoonchoi magneticanisotropyofquaternarygamnaspferromagneticsemiconductor AT seulkibac magneticanisotropyofquaternarygamnaspferromagneticsemiconductor AT alviurnasir magneticanisotropyofquaternarygamnaspferromagneticsemiconductor AT sanghoonlee magneticanisotropyofquaternarygamnaspferromagneticsemiconductor AT apardo magneticanisotropyofquaternarygamnaspferromagneticsemiconductor AT siningdong magneticanisotropyofquaternarygamnaspferromagneticsemiconductor AT xli magneticanisotropyofquaternarygamnaspferromagneticsemiconductor AT xliu magneticanisotropyofquaternarygamnaspferromagneticsemiconductor AT jkfurdyna magneticanisotropyofquaternarygamnaspferromagneticsemiconductor AT mdobrowolska magneticanisotropyofquaternarygamnaspferromagneticsemiconductor |