Remote growth of oxide heteroepitaxy through MoS2

Remote growth of oxide heteroepitaxy through MoS2

Advanced heterostructures composed of various materials can induce new physical properties and phenomena among existing materials, representing the essential foundation for modern electronics. Recently, many works have been carried out with novel heterostructures combining three-dimensional (3D) and...

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Bibliographic Details
Main Authors:	Chun-Hao Ma, Li-Syuan Lu, Haili Song, Jhih-Wei Chen, Ping-Chun Wu, Chung-Lin Wu, Rong Huang, Wen-Hao Chang, Ying-Hao Chu
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2021-05-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/5.0045639

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