Charge transfer mechanism for realization of double negative differential transconductance
Abstract With development of information age, multi-valued logic (MVL) technology utilizing negative differential transconductance (NDT) phenomenon has drawn attention as next-generation computing technology that can replace binary logic. However, because conventional NDT devices primarily use terna...
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Nature Portfolio
2024-02-01
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Series: | npj 2D Materials and Applications |
Online Access: | https://doi.org/10.1038/s41699-024-00454-z |
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author | Kyu Hyun Han Seung-Hwan Kim Seung-Geun Kim Jong-Hyun Kim Sungjoo Song Hyun-Yong Yu |
author_facet | Kyu Hyun Han Seung-Hwan Kim Seung-Geun Kim Jong-Hyun Kim Sungjoo Song Hyun-Yong Yu |
author_sort | Kyu Hyun Han |
collection | DOAJ |
description | Abstract With development of information age, multi-valued logic (MVL) technology utilizing negative differential transconductance (NDT) phenomenon has drawn attention as next-generation computing technology that can replace binary logic. However, because conventional NDT devices primarily use ternary logic, multiple-peak NDT device is required for higher-radix MVL that can process more datasets. Here, van der Waals double-peak anti-ambipolar transistor (AAT) as NDT device was developed by utilizing peak voltage (Vpeak) modulation of NDT peak. For realization of quaternary logic, Vpeak modulation technology was developed through charge transfer mechanism from channel, thereby shifting NDT peak and increasing peak-to-valley current ratio (PVCR). Furthermore, Double-peak AAT was implemented through parallel configuration of two AATs with different Vpeak values. Finally, quaternary inverter with four widely stable logic states was implemented by utilizing the developed double-peak AAT with two distinct NDT peaks and high PVCR. This double-peak AAT is expected to contribute to the development of next-generation MVL technology capable of processing datasets. |
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id | doaj.art-86c8de4baa87489b80fff6ffc3cd64de |
institution | Directory Open Access Journal |
issn | 2397-7132 |
language | English |
last_indexed | 2024-03-07T14:58:33Z |
publishDate | 2024-02-01 |
publisher | Nature Portfolio |
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series | npj 2D Materials and Applications |
spelling | doaj.art-86c8de4baa87489b80fff6ffc3cd64de2024-03-05T19:17:41ZengNature Portfolionpj 2D Materials and Applications2397-71322024-02-01811910.1038/s41699-024-00454-zCharge transfer mechanism for realization of double negative differential transconductanceKyu Hyun Han0Seung-Hwan Kim1Seung-Geun Kim2Jong-Hyun Kim3Sungjoo Song4Hyun-Yong Yu5School of Electrical Engineering, Korea UniversityCenter for Spintronics, Korea Institute of Science and Technology (KIST)Department of Semiconductor Systems Engineering, Korea UniversityDepartment of Semiconductor Systems Engineering, Korea UniversityDepartment of Semiconductor Systems Engineering, Korea UniversitySchool of Electrical Engineering, Korea UniversityAbstract With development of information age, multi-valued logic (MVL) technology utilizing negative differential transconductance (NDT) phenomenon has drawn attention as next-generation computing technology that can replace binary logic. However, because conventional NDT devices primarily use ternary logic, multiple-peak NDT device is required for higher-radix MVL that can process more datasets. Here, van der Waals double-peak anti-ambipolar transistor (AAT) as NDT device was developed by utilizing peak voltage (Vpeak) modulation of NDT peak. For realization of quaternary logic, Vpeak modulation technology was developed through charge transfer mechanism from channel, thereby shifting NDT peak and increasing peak-to-valley current ratio (PVCR). Furthermore, Double-peak AAT was implemented through parallel configuration of two AATs with different Vpeak values. Finally, quaternary inverter with four widely stable logic states was implemented by utilizing the developed double-peak AAT with two distinct NDT peaks and high PVCR. This double-peak AAT is expected to contribute to the development of next-generation MVL technology capable of processing datasets.https://doi.org/10.1038/s41699-024-00454-z |
spellingShingle | Kyu Hyun Han Seung-Hwan Kim Seung-Geun Kim Jong-Hyun Kim Sungjoo Song Hyun-Yong Yu Charge transfer mechanism for realization of double negative differential transconductance npj 2D Materials and Applications |
title | Charge transfer mechanism for realization of double negative differential transconductance |
title_full | Charge transfer mechanism for realization of double negative differential transconductance |
title_fullStr | Charge transfer mechanism for realization of double negative differential transconductance |
title_full_unstemmed | Charge transfer mechanism for realization of double negative differential transconductance |
title_short | Charge transfer mechanism for realization of double negative differential transconductance |
title_sort | charge transfer mechanism for realization of double negative differential transconductance |
url | https://doi.org/10.1038/s41699-024-00454-z |
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