Influence of impurities and structural defects on the properties of CdTe- and CdZnTe-based detectors
The most researched materials for uncooled semiconductor detectors of ionizing radiation are CdTe:Cl and Cd0.9Zn0.1Te, which allow to obtain detectors with high values of resistivity ρ and electron mobility. In the process of producing detector materials, the background impurities and defects can be...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2022-06-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/journalarchive/2022_1-3/4.pdf |