Extrema positions of charge carrier band spectrum in thin bismuth films
Many studies report an increase in charge carrier concentration in thin bismuth films as their thickness decreases at low temperatures. These results are obtained on the basis of data on resistivity, magnetoresistance, Hall coefficient, and thermal EMF measured in these films. The calculation is mo...
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| Format: | Article |
| Language: | English |
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Herzen State Pedagogical University of Russia
2022-12-01
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| Series: | Physics of Complex Systems |
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| Online Access: | https://physcomsys.ru/index.php/physcomsys/article/view/105 |
| _version_ | 1797859025886380032 |
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| author | Евгений Владимирович Демидов |
| author_facet | Евгений Владимирович Демидов |
| author_sort | Евгений Владимирович Демидов |
| collection | DOAJ |
| description |
Many studies report an increase in charge carrier concentration in thin bismuth films as their thickness decreases at low temperatures. These results are obtained on the basis of data on resistivity, magnetoresistance, Hall coefficient, and thermal EMF measured in these films. The calculation is most often carried out within the framework of the two-band approximation assuming the quadraticity of the dispersion law of electrons and holes. Using these approximations, it is possible to estimate the change in the position of energy extremes relative to the chemical potential in these films based on concentration values of charge carriers. This article presents all these calculations and analyses the extrema movement of the charge carrier band spectrum in bismuth films with a change in their thickness.
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| first_indexed | 2024-04-09T21:22:50Z |
| format | Article |
| id | doaj.art-86e20bf7384b47ef8d2344dae0ed934f |
| institution | Directory Open Access Journal |
| issn | 2687-153X |
| language | English |
| last_indexed | 2024-04-09T21:22:50Z |
| publishDate | 2022-12-01 |
| publisher | Herzen State Pedagogical University of Russia |
| record_format | Article |
| series | Physics of Complex Systems |
| spelling | doaj.art-86e20bf7384b47ef8d2344dae0ed934f2023-03-28T03:04:24ZengHerzen State Pedagogical University of RussiaPhysics of Complex Systems2687-153X2022-12-013410.33910/2687-153X-2022-3-4-154-158Extrema positions of charge carrier band spectrum in thin bismuth filmsЕвгений Владимирович Демидов0Herzen State Pedagogical University of Russia Many studies report an increase in charge carrier concentration in thin bismuth films as their thickness decreases at low temperatures. These results are obtained on the basis of data on resistivity, magnetoresistance, Hall coefficient, and thermal EMF measured in these films. The calculation is most often carried out within the framework of the two-band approximation assuming the quadraticity of the dispersion law of electrons and holes. Using these approximations, it is possible to estimate the change in the position of energy extremes relative to the chemical potential in these films based on concentration values of charge carriers. This article presents all these calculations and analyses the extrema movement of the charge carrier band spectrum in bismuth films with a change in their thickness. https://physcomsys.ru/index.php/physcomsys/article/view/105thin filmsbismuthtransport phenomenacharge carriers’ concentrationband structure |
| spellingShingle | Евгений Владимирович Демидов Extrema positions of charge carrier band spectrum in thin bismuth films Physics of Complex Systems thin films bismuth transport phenomena charge carriers’ concentration band structure |
| title | Extrema positions of charge carrier band spectrum in thin bismuth films |
| title_full | Extrema positions of charge carrier band spectrum in thin bismuth films |
| title_fullStr | Extrema positions of charge carrier band spectrum in thin bismuth films |
| title_full_unstemmed | Extrema positions of charge carrier band spectrum in thin bismuth films |
| title_short | Extrema positions of charge carrier band spectrum in thin bismuth films |
| title_sort | extrema positions of charge carrier band spectrum in thin bismuth films |
| topic | thin films bismuth transport phenomena charge carriers’ concentration band structure |
| url | https://physcomsys.ru/index.php/physcomsys/article/view/105 |
| work_keys_str_mv | AT evgenijvladimirovičdemidov extremapositionsofchargecarrierbandspectruminthinbismuthfilms |