High efficiency silicon solar cells with back ZnTe layer hosting IPV effect: a numerical case study
To get enhanced long-wavelength absorption, an impurity photovoltaic (IPV) mechanism was implemented within a transparent conducting oxide (TCO) at the rear of a solar cell. The numerical simulation of the N+/P (silicon)/IPV-TCO device was carried out by using SCAPS-1D program which allows the inclu...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2019-12-01
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| Series: | Journal of Taibah University for Science |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/16583655.2019.1623476 |
| _version_ | 1811203466661462016 |
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| author | M. Boumaour S. Sali S. Kermadi L. Zougar A. Bahfir Z. Chaieb |
| author_facet | M. Boumaour S. Sali S. Kermadi L. Zougar A. Bahfir Z. Chaieb |
| author_sort | M. Boumaour |
| collection | DOAJ |
| description | To get enhanced long-wavelength absorption, an impurity photovoltaic (IPV) mechanism was implemented within a transparent conducting oxide (TCO) at the rear of a solar cell. The numerical simulation of the N+/P (silicon)/IPV-TCO device was carried out by using SCAPS-1D program which allows the inclusion of optically active defects. In the proposed heterostructure configuration, ZnTe is a suitable material as back surface reflector. In analyzing the Si/ZnTe interface, lattice mismatch, energy band alignment and defects density were considered with appropriate treatment. In particular, to cure the detrimental 12% lattice mismatch at the interface, a thin silicon amorphous layer was inserted in-between, allowing 22.98% conversion efficiency. With adapted ZnTe Lucovsky's model for the optical capture cross sections and introduction of an oxygen radiative IPV defect (O2 level at 0.4 eV below the conduction band), a conversion efficiency of 27.15% was ultimately achieved. The experimental feasibility of the high-efficiency heterostructure device is evaluated. |
| first_indexed | 2024-04-12T02:56:14Z |
| format | Article |
| id | doaj.art-872e2ce4b4f34ff28ebbc535e5852751 |
| institution | Directory Open Access Journal |
| issn | 1658-3655 |
| language | English |
| last_indexed | 2024-04-12T02:56:14Z |
| publishDate | 2019-12-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Journal of Taibah University for Science |
| spelling | doaj.art-872e2ce4b4f34ff28ebbc535e58527512022-12-22T03:50:49ZengTaylor & Francis GroupJournal of Taibah University for Science1658-36552019-12-0113169670310.1080/16583655.2019.16234761623476High efficiency silicon solar cells with back ZnTe layer hosting IPV effect: a numerical case studyM. Boumaour0S. Sali1S. Kermadi2L. Zougar3A. Bahfir4Z. Chaieb5Centre de Recherche en Technologie des Semi-conducteurs pour l'Energétique (CRTSE), Division DDCSCentre de Recherche en Technologie des Semi-conducteurs pour l'Energétique (CRTSE), Division DDCSCentre de Recherche en Technologie des Semi-conducteurs pour l'Energétique (CRTSE), Division DDCSCentre de Recherche en Technologie des Semi-conducteurs pour l'Energétique (CRTSE), Division DDCSCentre de Recherche en Technologie des Semi-conducteurs pour l'Energétique (CRTSE), Division DDCSCentre de Recherche en Technologie des Semi-conducteurs pour l'Energétique (CRTSE), Division DDCSTo get enhanced long-wavelength absorption, an impurity photovoltaic (IPV) mechanism was implemented within a transparent conducting oxide (TCO) at the rear of a solar cell. The numerical simulation of the N+/P (silicon)/IPV-TCO device was carried out by using SCAPS-1D program which allows the inclusion of optically active defects. In the proposed heterostructure configuration, ZnTe is a suitable material as back surface reflector. In analyzing the Si/ZnTe interface, lattice mismatch, energy band alignment and defects density were considered with appropriate treatment. In particular, to cure the detrimental 12% lattice mismatch at the interface, a thin silicon amorphous layer was inserted in-between, allowing 22.98% conversion efficiency. With adapted ZnTe Lucovsky's model for the optical capture cross sections and introduction of an oxygen radiative IPV defect (O2 level at 0.4 eV below the conduction band), a conversion efficiency of 27.15% was ultimately achieved. The experimental feasibility of the high-efficiency heterostructure device is evaluated.http://dx.doi.org/10.1080/16583655.2019.1623476silicon solar cellimpurity photovoltaic effectznte:oscaps simulator |
| spellingShingle | M. Boumaour S. Sali S. Kermadi L. Zougar A. Bahfir Z. Chaieb High efficiency silicon solar cells with back ZnTe layer hosting IPV effect: a numerical case study Journal of Taibah University for Science silicon solar cell impurity photovoltaic effect znte:o scaps simulator |
| title | High efficiency silicon solar cells with back ZnTe layer hosting IPV effect: a numerical case study |
| title_full | High efficiency silicon solar cells with back ZnTe layer hosting IPV effect: a numerical case study |
| title_fullStr | High efficiency silicon solar cells with back ZnTe layer hosting IPV effect: a numerical case study |
| title_full_unstemmed | High efficiency silicon solar cells with back ZnTe layer hosting IPV effect: a numerical case study |
| title_short | High efficiency silicon solar cells with back ZnTe layer hosting IPV effect: a numerical case study |
| title_sort | high efficiency silicon solar cells with back znte layer hosting ipv effect a numerical case study |
| topic | silicon solar cell impurity photovoltaic effect znte:o scaps simulator |
| url | http://dx.doi.org/10.1080/16583655.2019.1623476 |
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