High efficiency silicon solar cells with back ZnTe layer hosting IPV effect: a numerical case study

High efficiency silicon solar cells with back ZnTe layer hosting IPV effect: a numerical case study

To get enhanced long-wavelength absorption, an impurity photovoltaic (IPV) mechanism was implemented within a transparent conducting oxide (TCO) at the rear of a solar cell. The numerical simulation of the N+/P (silicon)/IPV-TCO device was carried out by using SCAPS-1D program which allows the inclu...

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Bibliographic Details
Main Authors: M. Boumaour, S. Sali, S. Kermadi, L. Zougar, A. Bahfir, Z. Chaieb
Format: Article
Language:English
Published: Taylor & Francis Group 2019-12-01
Series:Journal of Taibah University for Science
Subjects:
silicon solar cell
impurity photovoltaic effect
znte:o
scaps simulator
Online Access:http://dx.doi.org/10.1080/16583655.2019.1623476

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