Ion Gel‐Gated Quasi‐Solid‐State Vertical Organic Electrochemical Transistor and Inverter
Abstract Parallel‐type organic electrochemical transistors (p‐OECTs) with aqueous electrolyte gate dielectrics have been widely studied for transducing biological signals into electrical signals. However, aqueous liquid electrolyte‐based p‐OECTs suffer from poor device stability, low transconductanc...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-06-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202300053 |
| _version_ | 1797672155106770944 |
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| author | Sang Young Jeong Jung Woo Moon Soonyong Lee Ziang Wu Sung Hyeon Park Jeong Ho Cho Han Young Woo |
| author_facet | Sang Young Jeong Jung Woo Moon Soonyong Lee Ziang Wu Sung Hyeon Park Jeong Ho Cho Han Young Woo |
| author_sort | Sang Young Jeong |
| collection | DOAJ |
| description | Abstract Parallel‐type organic electrochemical transistors (p‐OECTs) with aqueous electrolyte gate dielectrics have been widely studied for transducing biological signals into electrical signals. However, aqueous liquid electrolyte‐based p‐OECTs suffer from poor device stability, low transconductance (gm), and limited applications. In this study, a quasi‐solid‐state ion gel‐gated vertical‐type OECT (v‐OECT) and NOT logic gate are successfully demonstrated by combining both p‐type and n‐type v‐OECTs for the first time. Indacenodithiophene (IDT) polymers with alkyl (PIDTC16‐BT) and oligoethylene glycol (OEG) substituents (PIDTPEG‐BT) are studied as a channel material, and an ionic liquid in a crosslinked polymer matrix is adopted as a quasi‐solid electrolyte. Compared to aqueous devices, an enlarged electrochemical window and improved operational stability are observed. Notably, the v‐OECTs have a significantly larger channel area (50 × 50 µm2) and shorter channel length (≈30 nm), yielding a dramatically increased gm. As‐spun PIDTC16‐BT films exhibit a noticeably higher gm of 72.8 mS than that of previous p‐OECTs along with superior device stability, despite a low volumetric capacitance. In the case of v‐OECTs, face‐on intermolecular packing is required to increase the carrier transport in a vertical direction. Logic gates are successfully demonstrated using p‐ and n‐type v‐OECTs, suggesting the potential of OECT‐based next‐generation electronics. |
| first_indexed | 2024-03-11T21:26:02Z |
| format | Article |
| id | doaj.art-872f514dea374a6295922ffe82672c29 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-11T21:26:02Z |
| publishDate | 2023-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-872f514dea374a6295922ffe82672c292023-09-28T04:47:42ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-06-0196n/an/a10.1002/aelm.202300053Ion Gel‐Gated Quasi‐Solid‐State Vertical Organic Electrochemical Transistor and InverterSang Young Jeong0Jung Woo Moon1Soonyong Lee2Ziang Wu3Sung Hyeon Park4Jeong Ho Cho5Han Young Woo6Department of Chemistry Korea University Seoul 02841 Republic of KoreaDepartment of Chemical and Biomolecular Engineering Yonsei University Seoul 03722 Republic of KoreaDepartment of Chemistry Korea University Seoul 02841 Republic of KoreaDepartment of Chemistry Korea University Seoul 02841 Republic of KoreaDepartment of Chemical and Biomolecular Engineering Yonsei University Seoul 03722 Republic of KoreaDepartment of Chemical and Biomolecular Engineering Yonsei University Seoul 03722 Republic of KoreaDepartment of Chemistry Korea University Seoul 02841 Republic of KoreaAbstract Parallel‐type organic electrochemical transistors (p‐OECTs) with aqueous electrolyte gate dielectrics have been widely studied for transducing biological signals into electrical signals. However, aqueous liquid electrolyte‐based p‐OECTs suffer from poor device stability, low transconductance (gm), and limited applications. In this study, a quasi‐solid‐state ion gel‐gated vertical‐type OECT (v‐OECT) and NOT logic gate are successfully demonstrated by combining both p‐type and n‐type v‐OECTs for the first time. Indacenodithiophene (IDT) polymers with alkyl (PIDTC16‐BT) and oligoethylene glycol (OEG) substituents (PIDTPEG‐BT) are studied as a channel material, and an ionic liquid in a crosslinked polymer matrix is adopted as a quasi‐solid electrolyte. Compared to aqueous devices, an enlarged electrochemical window and improved operational stability are observed. Notably, the v‐OECTs have a significantly larger channel area (50 × 50 µm2) and shorter channel length (≈30 nm), yielding a dramatically increased gm. As‐spun PIDTC16‐BT films exhibit a noticeably higher gm of 72.8 mS than that of previous p‐OECTs along with superior device stability, despite a low volumetric capacitance. In the case of v‐OECTs, face‐on intermolecular packing is required to increase the carrier transport in a vertical direction. Logic gates are successfully demonstrated using p‐ and n‐type v‐OECTs, suggesting the potential of OECT‐based next‐generation electronics.https://doi.org/10.1002/aelm.202300053indacenodithiopheneion gelsorganic electrochemical transistorsquasi‐solid stateside‐chain engineeringvertical transistors |
| spellingShingle | Sang Young Jeong Jung Woo Moon Soonyong Lee Ziang Wu Sung Hyeon Park Jeong Ho Cho Han Young Woo Ion Gel‐Gated Quasi‐Solid‐State Vertical Organic Electrochemical Transistor and Inverter Advanced Electronic Materials indacenodithiophene ion gels organic electrochemical transistors quasi‐solid state side‐chain engineering vertical transistors |
| title | Ion Gel‐Gated Quasi‐Solid‐State Vertical Organic Electrochemical Transistor and Inverter |
| title_full | Ion Gel‐Gated Quasi‐Solid‐State Vertical Organic Electrochemical Transistor and Inverter |
| title_fullStr | Ion Gel‐Gated Quasi‐Solid‐State Vertical Organic Electrochemical Transistor and Inverter |
| title_full_unstemmed | Ion Gel‐Gated Quasi‐Solid‐State Vertical Organic Electrochemical Transistor and Inverter |
| title_short | Ion Gel‐Gated Quasi‐Solid‐State Vertical Organic Electrochemical Transistor and Inverter |
| title_sort | ion gel gated quasi solid state vertical organic electrochemical transistor and inverter |
| topic | indacenodithiophene ion gels organic electrochemical transistors quasi‐solid state side‐chain engineering vertical transistors |
| url | https://doi.org/10.1002/aelm.202300053 |
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