Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation
The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed. The research installation for investigating the IGBT...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sciendo
2015-09-01
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| Series: | Transport and Telecommunication |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/ttj-2015-0020 |
| _version_ | 1811272817853857792 |
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| author | Krainyukov Alexander Kutev Valery |
| author_facet | Krainyukov Alexander Kutev Valery |
| author_sort | Krainyukov Alexander |
| collection | DOAJ |
| description | The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed. The research installation for investigating the IGBT commutation processes during the pulse anode-cathode oxidation has been constructed. The experiments have been performed with its help in order to estimate the possibility of using half-bridge IGBT-modules with different drivers. The research results of the commutation processes investigation for different IGBT half- bridge modules are presented. |
| first_indexed | 2024-04-12T22:47:08Z |
| format | Article |
| id | doaj.art-87410284d89b410cbcf8e581fc885248 |
| institution | Directory Open Access Journal |
| issn | 1407-6179 |
| language | English |
| last_indexed | 2024-04-12T22:47:08Z |
| publishDate | 2015-09-01 |
| publisher | Sciendo |
| record_format | Article |
| series | Transport and Telecommunication |
| spelling | doaj.art-87410284d89b410cbcf8e581fc8852482022-12-22T03:13:29ZengSciendoTransport and Telecommunication1407-61792015-09-0116321722310.1515/ttj-2015-0020ttj-2015-0020Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc OxidationKrainyukov Alexander0Kutev Valery1Telematics and Logistics Institute, Lomonosova street 1, Riga, LV-1019, Latvia, Phone:+371 67100634, fax: +371 67100660Telematics and Logistics Institute, Lomonosova street 1, Riga, LV-1019, Latvia, Phone:+371 67100634, fax: +371 67100660The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed. The research installation for investigating the IGBT commutation processes during the pulse anode-cathode oxidation has been constructed. The experiments have been performed with its help in order to estimate the possibility of using half-bridge IGBT-modules with different drivers. The research results of the commutation processes investigation for different IGBT half- bridge modules are presented.https://doi.org/10.1515/ttj-2015-0020micro-arc oxidationinsulated gate bipolar transistorshigh voltagecommutation processballast resistance |
| spellingShingle | Krainyukov Alexander Kutev Valery Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation Transport and Telecommunication micro-arc oxidation insulated gate bipolar transistors high voltage commutation process ballast resistance |
| title | Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation |
| title_full | Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation |
| title_fullStr | Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation |
| title_full_unstemmed | Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation |
| title_short | Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation |
| title_sort | employment of igbt transistors for bipolar impulsed micro arc oxidation |
| topic | micro-arc oxidation insulated gate bipolar transistors high voltage commutation process ballast resistance |
| url | https://doi.org/10.1515/ttj-2015-0020 |
| work_keys_str_mv | AT krainyukovalexander employmentofigbttransistorsforbipolarimpulsedmicroarcoxidation AT kutevvalery employmentofigbttransistorsforbipolarimpulsedmicroarcoxidation |