Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation
The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed. The research installation for investigating the IGBT...
Main Authors: | Krainyukov Alexander, Kutev Valery |
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Format: | Article |
Language: | English |
Published: |
Sciendo
2015-09-01
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Series: | Transport and Telecommunication |
Subjects: | |
Online Access: | https://doi.org/10.1515/ttj-2015-0020 |
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