Precision current measurement with thermal-drift-minimized offset current for single-parameter electron pumps based on gate-switching technique

Single-parameter single-electron pumps (SEPs) based on a quantum dot have been suggested as promising devices to realize the new definition of the unit of current, the ampere, where quantized current produced from the SEP device is only defined by the elementary charge e and applied external radiofr...

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Main Authors: Bum-Kyu Kim, Suk-In Park, Jindong Song, Hyung-Kook Choi, Wan-Seop Kim, Nam Kim, Myung-Ho Bae
Format: Article
Language:English
Published: AIP Publishing LLC 2020-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0002587
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author Bum-Kyu Kim
Suk-In Park
Jindong Song
Hyung-Kook Choi
Wan-Seop Kim
Nam Kim
Myung-Ho Bae
author_facet Bum-Kyu Kim
Suk-In Park
Jindong Song
Hyung-Kook Choi
Wan-Seop Kim
Nam Kim
Myung-Ho Bae
author_sort Bum-Kyu Kim
collection DOAJ
description Single-parameter single-electron pumps (SEPs) based on a quantum dot have been suggested as promising devices to realize the new definition of the unit of current, the ampere, where quantized current produced from the SEP device is only defined by the elementary charge e and applied external radiofrequency (rf), f, i.e., I = ef. The conventional method to eliminate offset signals in the precision current measurement of pump current has been to measure the current difference between the pump-on and pump-off states. To date, the rf-on and rf-off method has been used to pump between its on and off states. However, this method inevitably induces alternating rf-heating effects and varying temperatures of the device environment, possibly leading to a thermal drift of the offset current. In the current work, we developed a new gate-switching technique that can alternate the pump on and off states while maintaining a constant rf-on state, resulting in a more stable system temperature. Using the gate-switching technique, we achieved a temperature-stabilized environment and performed a precision current measurement with sub-parts per million uncertainty.
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spelling doaj.art-8751950b59064cb2b4eaca009451b9312022-12-21T21:48:38ZengAIP Publishing LLCAIP Advances2158-32262020-04-01104045332045332-510.1063/5.0002587Precision current measurement with thermal-drift-minimized offset current for single-parameter electron pumps based on gate-switching techniqueBum-Kyu Kim0Suk-In Park1Jindong Song2Hyung-Kook Choi3Wan-Seop Kim4Nam Kim5Myung-Ho Bae6Korea Research Institute of Standards and Science, Daejeon 34113, South KoreaKorea Institute of Science and Technology, Seoul 02792, South KoreaKorea Institute of Science and Technology, Seoul 02792, South KoreaDepartment of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju 54896, South KoreaKorea Research Institute of Standards and Science, Daejeon 34113, South KoreaKorea Research Institute of Standards and Science, Daejeon 34113, South KoreaKorea Research Institute of Standards and Science, Daejeon 34113, South KoreaSingle-parameter single-electron pumps (SEPs) based on a quantum dot have been suggested as promising devices to realize the new definition of the unit of current, the ampere, where quantized current produced from the SEP device is only defined by the elementary charge e and applied external radiofrequency (rf), f, i.e., I = ef. The conventional method to eliminate offset signals in the precision current measurement of pump current has been to measure the current difference between the pump-on and pump-off states. To date, the rf-on and rf-off method has been used to pump between its on and off states. However, this method inevitably induces alternating rf-heating effects and varying temperatures of the device environment, possibly leading to a thermal drift of the offset current. In the current work, we developed a new gate-switching technique that can alternate the pump on and off states while maintaining a constant rf-on state, resulting in a more stable system temperature. Using the gate-switching technique, we achieved a temperature-stabilized environment and performed a precision current measurement with sub-parts per million uncertainty.http://dx.doi.org/10.1063/5.0002587
spellingShingle Bum-Kyu Kim
Suk-In Park
Jindong Song
Hyung-Kook Choi
Wan-Seop Kim
Nam Kim
Myung-Ho Bae
Precision current measurement with thermal-drift-minimized offset current for single-parameter electron pumps based on gate-switching technique
AIP Advances
title Precision current measurement with thermal-drift-minimized offset current for single-parameter electron pumps based on gate-switching technique
title_full Precision current measurement with thermal-drift-minimized offset current for single-parameter electron pumps based on gate-switching technique
title_fullStr Precision current measurement with thermal-drift-minimized offset current for single-parameter electron pumps based on gate-switching technique
title_full_unstemmed Precision current measurement with thermal-drift-minimized offset current for single-parameter electron pumps based on gate-switching technique
title_short Precision current measurement with thermal-drift-minimized offset current for single-parameter electron pumps based on gate-switching technique
title_sort precision current measurement with thermal drift minimized offset current for single parameter electron pumps based on gate switching technique
url http://dx.doi.org/10.1063/5.0002587
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