The Effects of Dopant Concentration on the Performances of the a-SiOx:H(p)/a-Si:H(i1)/a-Si:H(i2)/µc-Si:H(n) Heterojunction Solar Cell

The Effects of Dopant Concentration on the Performances of the a-SiOx:H(p)/a-Si:H(i1)/a-Si:H(i2)/µc-Si:H(n) Heterojunction Solar Cell

In this work, the imbalances in band gap energy between p-window layer and intrinsic layer (p/i interface) in p-i-n type solar cells to suppress charge recombination adopting with the addition of buffer layer, at p/i interface, namely solar cell structures without buffer (Cell A) and with buffer (Ce...

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Bibliographic Details
Main Authors: Dadan Hamdani, Soni Prayogi, Yoyok Cahyono, Gatut Yudoyono, Darminto Darminto
Format: Article
Language:English
Published: Diponegoro University 2022-02-01
Series:International Journal of Renewable Energy Development
Subjects:
p-type
afors-het
heterojunction
ito
barrier height
Online Access:https://ijred.cbiore.id/index.php/ijred/article/view/40193

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