A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET
This paper proposes a new 8T nonvolatile SRAM (nvSRAM) cell employing ULP FinFETs and ferroelectric FinFETs to enable energy-efficient and low-latency store/recall operations. Different from other types of nvSRAM requiring additional circuitry or nonvolatile memories connected to a standard 6T SRAM...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8986584/ |
| _version_ | 1818410615738204160 |
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| author | Wei-Xiang You Pin Su Chenming Hu |
| author_facet | Wei-Xiang You Pin Su Chenming Hu |
| author_sort | Wei-Xiang You |
| collection | DOAJ |
| description | This paper proposes a new 8T nonvolatile SRAM (nvSRAM) cell employing ULP FinFETs and ferroelectric FinFETs to enable energy-efficient and low-latency store/recall operations. Different from other types of nvSRAM requiring additional circuitry or nonvolatile memories connected to a standard 6T SRAM cell to achieve nonvolatility, the proposed hybrid nvSRAM cell reduces the area penalty by embedding the nonvolatile ferroelectric FinFETs in a 6T SRAM cell without sacrificing the cell stability, read/write performance and power consumption. |
| first_indexed | 2024-12-14T10:18:20Z |
| format | Article |
| id | doaj.art-878e564478604964bb50ed3ae0640eb2 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-14T10:18:20Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-878e564478604964bb50ed3ae0640eb22022-12-21T23:06:43ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01817117510.1109/JEDS.2020.29723198986584A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FETWei-Xiang You0https://orcid.org/0000-0002-4001-1084Pin Su1https://orcid.org/0000-0002-8213-4103Chenming Hu2https://orcid.org/0000-0003-0836-6296Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, TaiwanDepartment of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, TaiwanDepartment of Electrical Engineering and Computer Science, University of California at Berkeley, Berkeley, CA, USAThis paper proposes a new 8T nonvolatile SRAM (nvSRAM) cell employing ULP FinFETs and ferroelectric FinFETs to enable energy-efficient and low-latency store/recall operations. Different from other types of nvSRAM requiring additional circuitry or nonvolatile memories connected to a standard 6T SRAM cell to achieve nonvolatility, the proposed hybrid nvSRAM cell reduces the area penalty by embedding the nonvolatile ferroelectric FinFETs in a 6T SRAM cell without sacrificing the cell stability, read/write performance and power consumption.https://ieeexplore.ieee.org/document/8986584/Ferroelectric field-effect transistor FETnegative-capacitance FET (NCFET)FinFETnonvolatile SRAM (nvSRAM)nonvolatile memory |
| spellingShingle | Wei-Xiang You Pin Su Chenming Hu A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET IEEE Journal of the Electron Devices Society Ferroelectric field-effect transistor FET negative-capacitance FET (NCFET) FinFET nonvolatile SRAM (nvSRAM) nonvolatile memory |
| title | A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET |
| title_full | A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET |
| title_fullStr | A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET |
| title_full_unstemmed | A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET |
| title_short | A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET |
| title_sort | new 8t hybrid nonvolatile sram with ferroelectric fet |
| topic | Ferroelectric field-effect transistor FET negative-capacitance FET (NCFET) FinFET nonvolatile SRAM (nvSRAM) nonvolatile memory |
| url | https://ieeexplore.ieee.org/document/8986584/ |
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