LOW-TEMPERATURE SINTERING OF ZnO-Bi₂O₃-BASED VARISTOR CERAMICS FOR ENHANCED MICROSTRUCTURE DEVELOPMENT AND CURRENT-VOLTAGE CHARACTERISTICS
ZnO-Bi₂O₃-based varistor ceramics are typically sintered at temperatures above 1100 °C to ensure the proper microstructure development and the required current-voltage (I-U) characteristics. In this investigation the influence of the sintering regime at temperatures between 800 and 950 °C on the mic...
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| Format: | Article |
| Language: | English |
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University of Chemistry and Technology, Prague
2017-12-01
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| Series: | Ceramics-Silikáty |
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http://www.ceramics-silikaty.cz/index.php?page=cs_detail_doi&id=1115
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| _version_ | 1811201798491340800 |
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| author | Slavko Bernik Lihong Cheng Podlogar Matejka Li Guorong |
| author_facet | Slavko Bernik Lihong Cheng Podlogar Matejka Li Guorong |
| author_sort | Slavko Bernik |
| collection | DOAJ |
| description | ZnO-Bi₂O₃-based varistor ceramics are typically sintered at temperatures above 1100 °C to ensure the proper microstructure development and the required current-voltage (I-U) characteristics. In this investigation the influence of the sintering regime at temperatures between 800 and 950 °C on the microstructure development and the I-U characteristics of varistor ceramics was studied. It was shown that the presence of a sufficient amount of Bi₂O₃-based liquid phase at the proper Sb₂O₃-to-Bi₂O₃ ratio enhanced the sintering and also promoted grain growth under the influence of the inversion boundaries (IBs) triggered in the ZnO grains by the Sb₂O₃. The well-developed microstructures with high density and grain sizes from 4 to 8 μm resulted in good current-voltage characteristics of the samples with a coefficient of nonlinearity α equal to about 30 and a low leakage current IL of below 1 μA. Depending on the composition and the sintering regime, the threshold voltages VT were in the applicable range from 270V/mm to 850V/mm, even though values much greater than 1000V/mm are typically obtained with such low sintering temperatures. |
| first_indexed | 2024-04-12T02:27:57Z |
| format | Article |
| id | doaj.art-87c36a766ede487595f7d569d24d1053 |
| institution | Directory Open Access Journal |
| issn | 0862-5468 1804-5847 |
| language | English |
| last_indexed | 2024-04-12T02:27:57Z |
| publishDate | 2017-12-01 |
| publisher | University of Chemistry and Technology, Prague |
| record_format | Article |
| series | Ceramics-Silikáty |
| spelling | doaj.art-87c36a766ede487595f7d569d24d10532022-12-22T03:51:54ZengUniversity of Chemistry and Technology, PragueCeramics-Silikáty0862-54681804-58472017-12-0162181410.13168/cs.2017.004010.13168/cs.2017.0040.20180117121830LOW-TEMPERATURE SINTERING OF ZnO-Bi₂O₃-BASED VARISTOR CERAMICS FOR ENHANCED MICROSTRUCTURE DEVELOPMENT AND CURRENT-VOLTAGE CHARACTERISTICSSlavko Bernik0Lihong ChengPodlogar Matejka1Li Guorong Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia ZnO-Bi₂O₃-based varistor ceramics are typically sintered at temperatures above 1100 °C to ensure the proper microstructure development and the required current-voltage (I-U) characteristics. In this investigation the influence of the sintering regime at temperatures between 800 and 950 °C on the microstructure development and the I-U characteristics of varistor ceramics was studied. It was shown that the presence of a sufficient amount of Bi₂O₃-based liquid phase at the proper Sb₂O₃-to-Bi₂O₃ ratio enhanced the sintering and also promoted grain growth under the influence of the inversion boundaries (IBs) triggered in the ZnO grains by the Sb₂O₃. The well-developed microstructures with high density and grain sizes from 4 to 8 μm resulted in good current-voltage characteristics of the samples with a coefficient of nonlinearity α equal to about 30 and a low leakage current IL of below 1 μA. Depending on the composition and the sintering regime, the threshold voltages VT were in the applicable range from 270V/mm to 850V/mm, even though values much greater than 1000V/mm are typically obtained with such low sintering temperatures. http://www.ceramics-silikaty.cz/index.php?page=cs_detail_doi&id=1115 ZnO Varistor ceramics Sintering Microstructure Electrical characteristics |
| spellingShingle | Slavko Bernik Lihong Cheng Podlogar Matejka Li Guorong LOW-TEMPERATURE SINTERING OF ZnO-Bi₂O₃-BASED VARISTOR CERAMICS FOR ENHANCED MICROSTRUCTURE DEVELOPMENT AND CURRENT-VOLTAGE CHARACTERISTICS Ceramics-Silikáty ZnO Varistor ceramics Sintering Microstructure Electrical characteristics |
| title | LOW-TEMPERATURE SINTERING OF ZnO-Bi₂O₃-BASED VARISTOR CERAMICS FOR ENHANCED MICROSTRUCTURE DEVELOPMENT AND CURRENT-VOLTAGE CHARACTERISTICS |
| title_full | LOW-TEMPERATURE SINTERING OF ZnO-Bi₂O₃-BASED VARISTOR CERAMICS FOR ENHANCED MICROSTRUCTURE DEVELOPMENT AND CURRENT-VOLTAGE CHARACTERISTICS |
| title_fullStr | LOW-TEMPERATURE SINTERING OF ZnO-Bi₂O₃-BASED VARISTOR CERAMICS FOR ENHANCED MICROSTRUCTURE DEVELOPMENT AND CURRENT-VOLTAGE CHARACTERISTICS |
| title_full_unstemmed | LOW-TEMPERATURE SINTERING OF ZnO-Bi₂O₃-BASED VARISTOR CERAMICS FOR ENHANCED MICROSTRUCTURE DEVELOPMENT AND CURRENT-VOLTAGE CHARACTERISTICS |
| title_short | LOW-TEMPERATURE SINTERING OF ZnO-Bi₂O₃-BASED VARISTOR CERAMICS FOR ENHANCED MICROSTRUCTURE DEVELOPMENT AND CURRENT-VOLTAGE CHARACTERISTICS |
| title_sort | low temperature sintering of zno bi₂o₃ based varistor ceramics for enhanced microstructure development and current voltage characteristics |
| topic | ZnO Varistor ceramics Sintering Microstructure Electrical characteristics |
| url |
http://www.ceramics-silikaty.cz/index.php?page=cs_detail_doi&id=1115
|
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