A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS<sub>3</sub> Films
The prototypical chalcogenide perovskite, BaZrS<sub>3</sub> (BZS), with its direct bandgap of 1.7–1.8 eV, high chemical stability, and strong light–matter interactions, has garnered significant interest over the past few years. So far, attempts to grow BaZrS<sub>3</sub> films...
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MDPI AG
2023-03-01
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| Online Access: | https://www.mdpi.com/2304-6732/10/4/366 |
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| author | Samyak Dhole Xiucheng Wei Haolei Hui Pinku Roy Zachary Corey Yongqiang Wang Wanyi Nie Aiping Chen Hao Zeng Quanxi Jia |
| author_facet | Samyak Dhole Xiucheng Wei Haolei Hui Pinku Roy Zachary Corey Yongqiang Wang Wanyi Nie Aiping Chen Hao Zeng Quanxi Jia |
| author_sort | Samyak Dhole |
| collection | DOAJ |
| description | The prototypical chalcogenide perovskite, BaZrS<sub>3</sub> (BZS), with its direct bandgap of 1.7–1.8 eV, high chemical stability, and strong light–matter interactions, has garnered significant interest over the past few years. So far, attempts to grow BaZrS<sub>3</sub> films have been limited mainly to physical vapor deposition techniques. Here, we report the fabrication of BZS thin films via a facile aqueous solution route of polymer-assisted deposition (PAD), where the polymer-chelated cation precursor films were sulfurized in a mixed CS<sub>2</sub> and Ar atmosphere. The formation of a single-phase polycrystalline BZS thin film at a processing temperature of 900 °C was confirmed by X-ray diffraction and Raman spectroscopy. The stoichiometry of the films was verified by Rutherford Backscattering spectrometry and energy-dispersive X-ray spectroscopy. The BZS films showed a photoluminescence peak at around 1.8 eV and exhibited a photogenerated current under light illumination at a wavelength of 530 nm. Temperature-dependent resistivity analysis revealed that the conduction of BaZrS<sub>3</sub> films under the dark condition could be described by the Efros–Shklovskii variable range hopping model in the temperature range of 60–300 K, with an activation energy of about 44 meV. |
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| last_indexed | 2024-03-11T04:37:23Z |
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| series | Photonics |
| spelling | doaj.art-87ce7a864843441eb9fc8c6701422aef2023-11-17T20:57:02ZengMDPI AGPhotonics2304-67322023-03-0110436610.3390/photonics10040366A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS<sub>3</sub> FilmsSamyak Dhole0Xiucheng Wei1Haolei Hui2Pinku Roy3Zachary Corey4Yongqiang Wang5Wanyi Nie6Aiping Chen7Hao Zeng8Quanxi Jia9Department of Materials Design and Innovation, University at Buffalo–the State University of New York, Buffalo, NY 16260, USADepartment of Physics, University at Buffalo–the State University of New York, Buffalo, NY 16260, USADepartment of Physics, University at Buffalo–the State University of New York, Buffalo, NY 16260, USADepartment of Materials Design and Innovation, University at Buffalo–the State University of New York, Buffalo, NY 16260, USADepartment of Materials Design and Innovation, University at Buffalo–the State University of New York, Buffalo, NY 16260, USACenter for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87544, USACenter for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87544, USACenter for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87544, USADepartment of Physics, University at Buffalo–the State University of New York, Buffalo, NY 16260, USADepartment of Materials Design and Innovation, University at Buffalo–the State University of New York, Buffalo, NY 16260, USAThe prototypical chalcogenide perovskite, BaZrS<sub>3</sub> (BZS), with its direct bandgap of 1.7–1.8 eV, high chemical stability, and strong light–matter interactions, has garnered significant interest over the past few years. So far, attempts to grow BaZrS<sub>3</sub> films have been limited mainly to physical vapor deposition techniques. Here, we report the fabrication of BZS thin films via a facile aqueous solution route of polymer-assisted deposition (PAD), where the polymer-chelated cation precursor films were sulfurized in a mixed CS<sub>2</sub> and Ar atmosphere. The formation of a single-phase polycrystalline BZS thin film at a processing temperature of 900 °C was confirmed by X-ray diffraction and Raman spectroscopy. The stoichiometry of the films was verified by Rutherford Backscattering spectrometry and energy-dispersive X-ray spectroscopy. The BZS films showed a photoluminescence peak at around 1.8 eV and exhibited a photogenerated current under light illumination at a wavelength of 530 nm. Temperature-dependent resistivity analysis revealed that the conduction of BaZrS<sub>3</sub> films under the dark condition could be described by the Efros–Shklovskii variable range hopping model in the temperature range of 60–300 K, with an activation energy of about 44 meV.https://www.mdpi.com/2304-6732/10/4/366chemical solution depositionchalcogenideperovskitepolymer-assisted deposition |
| spellingShingle | Samyak Dhole Xiucheng Wei Haolei Hui Pinku Roy Zachary Corey Yongqiang Wang Wanyi Nie Aiping Chen Hao Zeng Quanxi Jia A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS<sub>3</sub> Films Photonics chemical solution deposition chalcogenide perovskite polymer-assisted deposition |
| title | A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS<sub>3</sub> Films |
| title_full | A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS<sub>3</sub> Films |
| title_fullStr | A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS<sub>3</sub> Films |
| title_full_unstemmed | A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS<sub>3</sub> Films |
| title_short | A Facile Aqueous Solution Route for the Growth of Chalcogenide Perovskite BaZrS<sub>3</sub> Films |
| title_sort | facile aqueous solution route for the growth of chalcogenide perovskite bazrs sub 3 sub films |
| topic | chemical solution deposition chalcogenide perovskite polymer-assisted deposition |
| url | https://www.mdpi.com/2304-6732/10/4/366 |
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