Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells
We report on light-induced electrical and macroscopic changes in hydrogenated polymorphous silicon (pm-Si:H) PIN solar cells. To explain the particular light-soaking behavior of such cells – namely an increase of the open circuit voltage (Voc) and a rapid drop of the short circuit current densit...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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EDP Sciences
2012-07-01
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| Series: | EPJ Photovoltaics |
| Online Access: | http://dx.doi.org/10.1051/epjpv/2012005 |
| _version_ | 1818559064658935808 |
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| author | Roca i Cabarrocas P. Abramov A. Kim K.H. Johnson E.V. |
| author_facet | Roca i Cabarrocas P. Abramov A. Kim K.H. Johnson E.V. |
| author_sort | Roca i Cabarrocas P. |
| collection | DOAJ |
| description | We report on light-induced electrical and macroscopic changes in hydrogenated polymorphous silicon (pm-Si:H) PIN solar cells. To explain the particular light-soaking behavior of such cells – namely an increase of the open circuit voltage (Voc) and a rapid drop of the short circuit current density (Jsc) – we correlate these effects to changes in hydrogen incorporation and structural properties in the layers of the cells. Numerous techniques such as current-voltage characteristics, infrared spectroscopy, hydrogen exodiffusion, Raman spectroscopy, atomic force microscopy, scanning electron microscopy and spectroscopic ellipsometry are used to study the light-induced changes from microscopic to macroscopic scales (up to tens of microns). Such comprehensive use of complementary techniques lead us to suggest that light-soaking produces the diffusion of molecular hydrogen, hydrogen accumulation at p-layer/substrate interface and localized delamination of the interface. Based on these results we propose that light-induced degradation of PIN solar cells has to be addressed from not only as a material issue, but also a device point of view. In particular we bring experimental evidence that localized delamination at the interface between the p-layer and SnO2 substrate by light-induced hydrogen motion causes the rapid drop of Jsc. |
| first_indexed | 2024-12-14T00:20:29Z |
| format | Article |
| id | doaj.art-87e2c382cff24745a590d07b7585bdb0 |
| institution | Directory Open Access Journal |
| issn | 2105-0716 |
| language | English |
| last_indexed | 2024-12-14T00:20:29Z |
| publishDate | 2012-07-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | EPJ Photovoltaics |
| spelling | doaj.art-87e2c382cff24745a590d07b7585bdb02022-12-21T23:25:15ZengEDP SciencesEPJ Photovoltaics2105-07162012-07-0133030110.1051/epjpv/2012005Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cellsRoca i Cabarrocas P.Abramov A.Kim K.H.Johnson E.V.We report on light-induced electrical and macroscopic changes in hydrogenated polymorphous silicon (pm-Si:H) PIN solar cells. To explain the particular light-soaking behavior of such cells – namely an increase of the open circuit voltage (Voc) and a rapid drop of the short circuit current density (Jsc) – we correlate these effects to changes in hydrogen incorporation and structural properties in the layers of the cells. Numerous techniques such as current-voltage characteristics, infrared spectroscopy, hydrogen exodiffusion, Raman spectroscopy, atomic force microscopy, scanning electron microscopy and spectroscopic ellipsometry are used to study the light-induced changes from microscopic to macroscopic scales (up to tens of microns). Such comprehensive use of complementary techniques lead us to suggest that light-soaking produces the diffusion of molecular hydrogen, hydrogen accumulation at p-layer/substrate interface and localized delamination of the interface. Based on these results we propose that light-induced degradation of PIN solar cells has to be addressed from not only as a material issue, but also a device point of view. In particular we bring experimental evidence that localized delamination at the interface between the p-layer and SnO2 substrate by light-induced hydrogen motion causes the rapid drop of Jsc.http://dx.doi.org/10.1051/epjpv/2012005 |
| spellingShingle | Roca i Cabarrocas P. Abramov A. Kim K.H. Johnson E.V. Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells EPJ Photovoltaics |
| title | Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells |
| title_full | Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells |
| title_fullStr | Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells |
| title_full_unstemmed | Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells |
| title_short | Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells |
| title_sort | light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells |
| url | http://dx.doi.org/10.1051/epjpv/2012005 |
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