Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobate
Charged domain walls (CDWs) in ferroelectric materials raise both fundamental and practical interest due to their electrophysical properties differing from bulk ones. On a microstructure level, CDWs in ferroelectrics are 2D defects separating regions with different spontaneous polarization vector di...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Pensoft Publishers
2023-12-01
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| Series: | Modern Electronic Materials |
| Online Access: | https://moem.pensoft.net/article/116646/download/pdf/ |
| _version_ | 1797384752102113280 |
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| author | Aleksandr M. Kislyuk Ilya V. Kubasov Alexander A. Temirov Andrei V. Turutin Andrey S. Shportenko Viktor V. Kuts Mikhail D. Malinkovich |
| author_facet | Aleksandr M. Kislyuk Ilya V. Kubasov Alexander A. Temirov Andrei V. Turutin Andrey S. Shportenko Viktor V. Kuts Mikhail D. Malinkovich |
| author_sort | Aleksandr M. Kislyuk |
| collection | DOAJ |
| description | Charged domain walls (CDWs) in ferroelectric materials raise both fundamental and practical interest due to their electrophysical properties differing from bulk ones. On a microstructure level, CDWs in ferroelectrics are 2D defects separating regions with different spontaneous polarization vector directions. Screening of electric field of the CDW's bound ionic charges by mobile carriers leads to the formation of elongated narrow channels with an elevated conductivity in initially dielectric materials. Controlling the position and inclination angle of CDW relative to the spontaneous polarization direction, one can change its conductivity over a wide range thus providing good opportunities for developing memory devices, including neuromorphic systems. This review describes the state of art in the formation and application of CDWs in single crystal uniaxial ferroelectric lithium niobate (LiNbO3, LN), as resistive and memristive switching devices. The main CDWs formation methods in single crystal and thin-film LN have been described, and modern data have been presented on the electrophysical properties and electrical conductivity control methods of CDWs. Prospects of CDWs application in resistive and memristive switching memory devices have been discussed. |
| first_indexed | 2024-03-08T21:43:08Z |
| format | Article |
| id | doaj.art-87ec33e3c9a042f6b176cf74b6f524c7 |
| institution | Directory Open Access Journal |
| issn | 2452-1779 |
| language | English |
| last_indexed | 2024-03-08T21:43:08Z |
| publishDate | 2023-12-01 |
| publisher | Pensoft Publishers |
| record_format | Article |
| series | Modern Electronic Materials |
| spelling | doaj.art-87ec33e3c9a042f6b176cf74b6f524c72023-12-20T11:00:09ZengPensoft PublishersModern Electronic Materials2452-17792023-12-019414516110.3897/j.moem.9.4.116646116646Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobateAleksandr M. Kislyuk0Ilya V. Kubasov1Alexander A. Temirov2Andrei V. Turutin3Andrey S. Shportenko4Viktor V. Kuts5Mikhail D. Malinkovich6National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”National University of Science and Technology “MISIS”Charged domain walls (CDWs) in ferroelectric materials raise both fundamental and practical interest due to their electrophysical properties differing from bulk ones. On a microstructure level, CDWs in ferroelectrics are 2D defects separating regions with different spontaneous polarization vector directions. Screening of electric field of the CDW's bound ionic charges by mobile carriers leads to the formation of elongated narrow channels with an elevated conductivity in initially dielectric materials. Controlling the position and inclination angle of CDW relative to the spontaneous polarization direction, one can change its conductivity over a wide range thus providing good opportunities for developing memory devices, including neuromorphic systems. This review describes the state of art in the formation and application of CDWs in single crystal uniaxial ferroelectric lithium niobate (LiNbO3, LN), as resistive and memristive switching devices. The main CDWs formation methods in single crystal and thin-film LN have been described, and modern data have been presented on the electrophysical properties and electrical conductivity control methods of CDWs. Prospects of CDWs application in resistive and memristive switching memory devices have been discussed.https://moem.pensoft.net/article/116646/download/pdf/ |
| spellingShingle | Aleksandr M. Kislyuk Ilya V. Kubasov Alexander A. Temirov Andrei V. Turutin Andrey S. Shportenko Viktor V. Kuts Mikhail D. Malinkovich Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobate Modern Electronic Materials |
| title | Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobate |
| title_full | Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobate |
| title_fullStr | Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobate |
| title_full_unstemmed | Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobate |
| title_short | Electrophysical properties, memristive and resistive switching of charged domain walls in lithium niobate |
| title_sort | electrophysical properties memristive and resistive switching of charged domain walls in lithium niobate |
| url | https://moem.pensoft.net/article/116646/download/pdf/ |
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