Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation
The photocurrent produced by 259 nm wavelength excitation was measured in β-Ga2O3 Schottky diodes before and after neutron irradiation. These samples differed by the density of deep acceptors in the lower half of the bandgap as detected by capacitance–voltage profiling under monochromatic illuminati...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2020-11-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0030105 |
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| author | E. B. Yakimov A. Y. Polyakov I. V. Shchemerov N. B. Smirnov A. A. Vasilev P. S. Vergeles E. E. Yakimov A. V. Chernykh A. S. Shikoh F. Ren S. J. Pearton |
| author_facet | E. B. Yakimov A. Y. Polyakov I. V. Shchemerov N. B. Smirnov A. A. Vasilev P. S. Vergeles E. E. Yakimov A. V. Chernykh A. S. Shikoh F. Ren S. J. Pearton |
| author_sort | E. B. Yakimov |
| collection | DOAJ |
| description | The photocurrent produced by 259 nm wavelength excitation was measured in β-Ga2O3 Schottky diodes before and after neutron irradiation. These samples differed by the density of deep acceptors in the lower half of the bandgap as detected by capacitance–voltage profiling under monochromatic illumination. Irradiation led to a very strong increase in photocurrent, which closely correlated with the increase in deep trap density and the decrease after illumination of the effective Schottky barrier height due to hole capture by acceptors. A similar effect was observed on an as-grown βs-Ga2O3 film with a high density of deep acceptors. Electron beam induced current measurements indicated a strong amplification of photocurrent, which is attributed to the Schottky barrier lowering by holes trapped on acceptors near the surface. Photocurrent build-up and decay curves show several time constants ranging from several milliseconds to many seconds. These characteristic times are attributed to tunneling of electrons into the hole-filled acceptors near the surface and to thermal emission of holes from deep acceptors. |
| first_indexed | 2024-12-17T21:40:39Z |
| format | Article |
| id | doaj.art-880ae276cd00401d8965e67cba56554b |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-17T21:40:39Z |
| publishDate | 2020-11-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-880ae276cd00401d8965e67cba56554b2022-12-21T21:31:38ZengAIP Publishing LLCAPL Materials2166-532X2020-11-01811111105111105-610.1063/5.0030105Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiationE. B. Yakimov0A. Y. Polyakov1I. V. Shchemerov2N. B. Smirnov3A. A. Vasilev4P. S. Vergeles5E. E. Yakimov6A. V. Chernykh7A. S. Shikoh8F. Ren9S. J. Pearton10Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow 142432, RussiaNational University of Science and Technology MISiS, Moscow 119049, RussiaNational University of Science and Technology MISiS, Moscow 119049, RussiaNational University of Science and Technology MISiS, Moscow 119049, RussiaNational University of Science and Technology MISiS, Moscow 119049, RussiaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow 142432, RussiaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Moscow 142432, RussiaNational University of Science and Technology MISiS, Moscow 119049, RussiaNational University of Science and Technology MISiS, Moscow 119049, RussiaDepartment of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USADepartment of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USAThe photocurrent produced by 259 nm wavelength excitation was measured in β-Ga2O3 Schottky diodes before and after neutron irradiation. These samples differed by the density of deep acceptors in the lower half of the bandgap as detected by capacitance–voltage profiling under monochromatic illumination. Irradiation led to a very strong increase in photocurrent, which closely correlated with the increase in deep trap density and the decrease after illumination of the effective Schottky barrier height due to hole capture by acceptors. A similar effect was observed on an as-grown βs-Ga2O3 film with a high density of deep acceptors. Electron beam induced current measurements indicated a strong amplification of photocurrent, which is attributed to the Schottky barrier lowering by holes trapped on acceptors near the surface. Photocurrent build-up and decay curves show several time constants ranging from several milliseconds to many seconds. These characteristic times are attributed to tunneling of electrons into the hole-filled acceptors near the surface and to thermal emission of holes from deep acceptors.http://dx.doi.org/10.1063/5.0030105 |
| spellingShingle | E. B. Yakimov A. Y. Polyakov I. V. Shchemerov N. B. Smirnov A. A. Vasilev P. S. Vergeles E. E. Yakimov A. V. Chernykh A. S. Shikoh F. Ren S. J. Pearton Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation APL Materials |
| title | Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation |
| title_full | Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation |
| title_fullStr | Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation |
| title_full_unstemmed | Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation |
| title_short | Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation |
| title_sort | photosensitivity of ga2o3 schottky diodes effects of deep acceptor traps present before and after neutron irradiation |
| url | http://dx.doi.org/10.1063/5.0030105 |
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