A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization
A ruggedness improved multi-band radio frequency (RF) power amplifier (PA) module applicable to mobile handsets, which are required to survive against a serious load impedance change under extreme power and bias conditions, is presented. In this method, the load impedance of PA is adaptively adjuste...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-11-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/8/11/1317 |
| _version_ | 1798041075084951552 |
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| author | Jooyoung Jeon Myounggon Kang |
| author_facet | Jooyoung Jeon Myounggon Kang |
| author_sort | Jooyoung Jeon |
| collection | DOAJ |
| description | A ruggedness improved multi-band radio frequency (RF) power amplifier (PA) module applicable to mobile handsets, which are required to survive against a serious load impedance change under extreme power and bias conditions, is presented. In this method, the load impedance of PA is adaptively adjusted with a digitally controlled impedance corrector to keep the PA safe by performing a load mismatch detection. The impedance mismatch detector, impedance corrector, and other RF switches were all integrated into a single integrated circuit (IC) using silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS). For the verification purpose, a 2-stage hetero junction bipolar transistor (HBT) PA module adopting this method was fabricated. At a frequency of 1915 MHz, a collector bias voltage of 4.2 V, and over a wider range of load impedance variation between a VSWR of 1 and a VSWR of 5.5, it did not fail. When this technique was not applied with a voltage standing wave ratio (VSWR) range of 1 to 4, it resulted in an acceptable RF performance degradation of 1% power added efficiency (PAE) in envelope tracking (ET) mode. Moreover, it survived at a bias voltage 1V larger than when the technique was not applied for the same mismatch condition. |
| first_indexed | 2024-04-11T22:16:26Z |
| format | Article |
| id | doaj.art-886974f1b20a415d85b5fd28bcd0ca3f |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-04-11T22:16:26Z |
| publishDate | 2019-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-886974f1b20a415d85b5fd28bcd0ca3f2022-12-22T04:00:22ZengMDPI AGElectronics2079-92922019-11-01811131710.3390/electronics8111317electronics8111317A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined AtomizationJooyoung Jeon0Myounggon Kang1Wireless Semiconductor Division, Broadcom Inc., Seoul 06771, KoreaDepartment of Electronics Engineering, Korea National University of Transportation, 50 Daehak-ro, Chungju-si, Chungbuk 380-702, KoreaA ruggedness improved multi-band radio frequency (RF) power amplifier (PA) module applicable to mobile handsets, which are required to survive against a serious load impedance change under extreme power and bias conditions, is presented. In this method, the load impedance of PA is adaptively adjusted with a digitally controlled impedance corrector to keep the PA safe by performing a load mismatch detection. The impedance mismatch detector, impedance corrector, and other RF switches were all integrated into a single integrated circuit (IC) using silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS). For the verification purpose, a 2-stage hetero junction bipolar transistor (HBT) PA module adopting this method was fabricated. At a frequency of 1915 MHz, a collector bias voltage of 4.2 V, and over a wider range of load impedance variation between a VSWR of 1 and a VSWR of 5.5, it did not fail. When this technique was not applied with a voltage standing wave ratio (VSWR) range of 1 to 4, it resulted in an acceptable RF performance degradation of 1% power added efficiency (PAE) in envelope tracking (ET) mode. Moreover, it survived at a bias voltage 1V larger than when the technique was not applied for the same mismatch condition.https://www.mdpi.com/2079-9292/8/11/1317rf power amplifierhardware moduleruggednessprotection circuitmobile industry processor interface (mipi) controlembedded-software controlimpedance tuning |
| spellingShingle | Jooyoung Jeon Myounggon Kang A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization Electronics rf power amplifier hardware module ruggedness protection circuit mobile industry processor interface (mipi) control embedded-software control impedance tuning |
| title | A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization |
| title_full | A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization |
| title_fullStr | A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization |
| title_full_unstemmed | A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization |
| title_short | A Ruggedness Improved Mobile Radio Frequency Power Amplifier Module with Dynamic Impedance Correction by Software Defined Atomization |
| title_sort | ruggedness improved mobile radio frequency power amplifier module with dynamic impedance correction by software defined atomization |
| topic | rf power amplifier hardware module ruggedness protection circuit mobile industry processor interface (mipi) control embedded-software control impedance tuning |
| url | https://www.mdpi.com/2079-9292/8/11/1317 |
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