Can ZrAlN thin films be used as thermistor sensors for temperature assessment?
The electrical characteristics and conduction mechanisms of ZrAlN thin films for their potential use as thermistor sensors were assessed. Various compositions of Zr1-xAlxN were synthesized by sputtering and studied up to 200 °C to understand their sensitivity and applicability. Among the composition...
| Main Authors: | , , , , , |
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| פורמט: | Article |
| שפה: | English |
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Elsevier
2024-06-01
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| סדרה: | Journal of Science: Advanced Materials and Devices |
| נושאים: | |
| גישה מקוונת: | http://www.sciencedirect.com/science/article/pii/S2468217924000078 |
| _version_ | 1827365318708690944 |
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| author | Bruno Martins Carlos Patacas Albano Cavaleiro Pedro Faia Oleksandr Bondarchuk Filipe Fernandes |
| author_facet | Bruno Martins Carlos Patacas Albano Cavaleiro Pedro Faia Oleksandr Bondarchuk Filipe Fernandes |
| author_sort | Bruno Martins |
| collection | DOAJ |
| description | The electrical characteristics and conduction mechanisms of ZrAlN thin films for their potential use as thermistor sensors were assessed. Various compositions of Zr1-xAlxN were synthesized by sputtering and studied up to 200 °C to understand their sensitivity and applicability. Among the compositions studied, the ones with x = 0.34 and x = 0.46 showed the highest sensitivities, reaching values close to 3000 K. However, the thermo-resistive properties exhibited by these compositions limited their utilization above 100 °C. Zr1-xAlxN film compositions with x higher than 0.46 showed amorphous structures and were found to be insulative. Composition with x = 0.26, within the cubic phase, showed the most promising electrical properties regarding temperature sensing in the studied range. XPS analysis of this composition confirmed the presence of Zr-N and Al-N bonds, with a Zr3+ oxidation state, which suggests the availability of a free electron contributing to the electrical conduction. Impedance measurements performed at different temperatures for this composition revealed the dominant role of the grain boundaries in the conduction mechanism, based upon electron hopping between grains, overcoming the energy barrier imposed by the grain boundaries. ZrAlN thin films demonstrate negative temperature coefficient (NTC) thermistor behavior, expanding their applications beyond protective coatings to temperature monitoring. |
| first_indexed | 2024-03-08T08:26:33Z |
| format | Article |
| id | doaj.art-887a93d68d684435be486d1f0b51c1cb |
| institution | Directory Open Access Journal |
| issn | 2468-2179 |
| language | English |
| last_indexed | 2024-03-08T08:26:33Z |
| publishDate | 2024-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Science: Advanced Materials and Devices |
| spelling | doaj.art-887a93d68d684435be486d1f0b51c1cb2024-02-02T04:40:00ZengElsevierJournal of Science: Advanced Materials and Devices2468-21792024-06-0192100676Can ZrAlN thin films be used as thermistor sensors for temperature assessment?Bruno Martins0Carlos Patacas1Albano Cavaleiro2Pedro Faia3Oleksandr Bondarchuk4Filipe Fernandes5IPN - LED&MAT - Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199, Coimbra, Portugal; University of Coimbra, CEMMPRE, ARISE, Department of Mechanical Engineering, Rua Luís Reis Santos, 3030-788, Coimbra, Portugal; Corresponding author. IPN - LED&MAT - Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199, Coimbra, Portugal.IPN - LED&MAT - Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199, Coimbra, Portugal; University of Coimbra, CEMMPRE, ARISE, Department of Mechanical Engineering, Rua Luís Reis Santos, 3030-788, Coimbra, PortugalIPN - LED&MAT - Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199, Coimbra, Portugal; University of Coimbra, CEMMPRE, ARISE, Department of Mechanical Engineering, Rua Luís Reis Santos, 3030-788, Coimbra, PortugalUniversity of Coimbra, CEMMPRE – Electrical and Computer Engineering Department, FCTUC, Polo 2, Pinhal de Marrocos, Coimbra, 3030-290, PortugalInternational Iberian Nanotechnology Laboratory (INL), Avenida Mestre Jose Veiga, 4715-330, Braga, PortugalUniversity of Coimbra, CEMMPRE, ARISE, Department of Mechanical Engineering, Rua Luís Reis Santos, 3030-788, Coimbra, Portugal; ISEP - Polytechnic of Porto, Rua Dr. António Bernardino de Almeida, 4249-015, Porto, PortugalThe electrical characteristics and conduction mechanisms of ZrAlN thin films for their potential use as thermistor sensors were assessed. Various compositions of Zr1-xAlxN were synthesized by sputtering and studied up to 200 °C to understand their sensitivity and applicability. Among the compositions studied, the ones with x = 0.34 and x = 0.46 showed the highest sensitivities, reaching values close to 3000 K. However, the thermo-resistive properties exhibited by these compositions limited their utilization above 100 °C. Zr1-xAlxN film compositions with x higher than 0.46 showed amorphous structures and were found to be insulative. Composition with x = 0.26, within the cubic phase, showed the most promising electrical properties regarding temperature sensing in the studied range. XPS analysis of this composition confirmed the presence of Zr-N and Al-N bonds, with a Zr3+ oxidation state, which suggests the availability of a free electron contributing to the electrical conduction. Impedance measurements performed at different temperatures for this composition revealed the dominant role of the grain boundaries in the conduction mechanism, based upon electron hopping between grains, overcoming the energy barrier imposed by the grain boundaries. ZrAlN thin films demonstrate negative temperature coefficient (NTC) thermistor behavior, expanding their applications beyond protective coatings to temperature monitoring.http://www.sciencedirect.com/science/article/pii/S2468217924000078NTC thin-film thermistorReactive sputteringNitride semiconductorsImpedance spectroscopyTemperature sensing |
| spellingShingle | Bruno Martins Carlos Patacas Albano Cavaleiro Pedro Faia Oleksandr Bondarchuk Filipe Fernandes Can ZrAlN thin films be used as thermistor sensors for temperature assessment? Journal of Science: Advanced Materials and Devices NTC thin-film thermistor Reactive sputtering Nitride semiconductors Impedance spectroscopy Temperature sensing |
| title | Can ZrAlN thin films be used as thermistor sensors for temperature assessment? |
| title_full | Can ZrAlN thin films be used as thermistor sensors for temperature assessment? |
| title_fullStr | Can ZrAlN thin films be used as thermistor sensors for temperature assessment? |
| title_full_unstemmed | Can ZrAlN thin films be used as thermistor sensors for temperature assessment? |
| title_short | Can ZrAlN thin films be used as thermistor sensors for temperature assessment? |
| title_sort | can zraln thin films be used as thermistor sensors for temperature assessment |
| topic | NTC thin-film thermistor Reactive sputtering Nitride semiconductors Impedance spectroscopy Temperature sensing |
| url | http://www.sciencedirect.com/science/article/pii/S2468217924000078 |
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