Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor
High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm<sup>2</sup>/V·s, even for SnO TFTs with a...
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MDPI AG
2022-01-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/2/261 |
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| author | Te Jui Yen Albert Chin Weng Kent Chan Hsin-Yi Tiffany Chen Vladimir Gritsenko |
| author_facet | Te Jui Yen Albert Chin Weng Kent Chan Hsin-Yi Tiffany Chen Vladimir Gritsenko |
| author_sort | Te Jui Yen |
| collection | DOAJ |
| description | High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm<sup>2</sup>/V·s, even for SnO TFTs with a unique single-hole band and a small hole effective mass. In this paper, we demonstrate a high-performance GeSn pTFT with a high field-effect hole mobility (μ<sub>FE</sub>), of 41.8 cm<sup>2</sup>/V·s; a sharp turn-on subthreshold slope (<i>SS</i>), of 311 mV/dec, for low-voltage operation; and a large on-current/off-current (I<sub>ON</sub>/I<sub>OFF</sub>) value, of 8.9 × 10<sup>6</sup>. This remarkably high I<sub>ON</sub>/I<sub>OFF</sub> is achieved using an ultra-thin nanosheet GeSn, with a thickness of only 7 nm. Although an even higher hole mobility (103.8 cm<sup>2</sup>/V·s) was obtained with a thicker GeSn channel, the I<sub>OFF</sub> increased rapidly and the poor I<sub>ON</sub>/I<sub>OFF</sub> (75) was unsuitable for transistor applications. The high mobility is due to the small hole effective mass of GeSn, which is supported by first-principles electronic structure calculations. |
| first_indexed | 2024-03-10T00:48:07Z |
| format | Article |
| id | doaj.art-88a39cd28e5c4d57a92646e583041c85 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T00:48:07Z |
| publishDate | 2022-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-88a39cd28e5c4d57a92646e583041c852023-11-23T14:55:29ZengMDPI AGNanomaterials2079-49912022-01-0112226110.3390/nano12020261Remarkably High-Performance Nanosheet GeSn Thin-Film TransistorTe Jui Yen0Albert Chin1Weng Kent Chan2Hsin-Yi Tiffany Chen3Vladimir Gritsenko4Department of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, TaiwanDepartment of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, TaiwanDepartment of Engineering and System Science, National Tsing Hua University, Hsinchu 300, TaiwanDepartment of Engineering and System Science, National Tsing Hua University, Hsinchu 300, TaiwanRzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, RussiaHigh-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm<sup>2</sup>/V·s, even for SnO TFTs with a unique single-hole band and a small hole effective mass. In this paper, we demonstrate a high-performance GeSn pTFT with a high field-effect hole mobility (μ<sub>FE</sub>), of 41.8 cm<sup>2</sup>/V·s; a sharp turn-on subthreshold slope (<i>SS</i>), of 311 mV/dec, for low-voltage operation; and a large on-current/off-current (I<sub>ON</sub>/I<sub>OFF</sub>) value, of 8.9 × 10<sup>6</sup>. This remarkably high I<sub>ON</sub>/I<sub>OFF</sub> is achieved using an ultra-thin nanosheet GeSn, with a thickness of only 7 nm. Although an even higher hole mobility (103.8 cm<sup>2</sup>/V·s) was obtained with a thicker GeSn channel, the I<sub>OFF</sub> increased rapidly and the poor I<sub>ON</sub>/I<sub>OFF</sub> (75) was unsuitable for transistor applications. The high mobility is due to the small hole effective mass of GeSn, which is supported by first-principles electronic structure calculations.https://www.mdpi.com/2079-4991/12/2/261GeSnnanosheet TFTmonolithic 3D IC3D brain-mimicking ICs |
| spellingShingle | Te Jui Yen Albert Chin Weng Kent Chan Hsin-Yi Tiffany Chen Vladimir Gritsenko Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor Nanomaterials GeSn nanosheet TFT monolithic 3D IC 3D brain-mimicking ICs |
| title | Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor |
| title_full | Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor |
| title_fullStr | Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor |
| title_full_unstemmed | Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor |
| title_short | Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor |
| title_sort | remarkably high performance nanosheet gesn thin film transistor |
| topic | GeSn nanosheet TFT monolithic 3D IC 3D brain-mimicking ICs |
| url | https://www.mdpi.com/2079-4991/12/2/261 |
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