High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures

Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH<sub>3</sub>) as the reactive nitrogen source. The growth of GaN on silica nanosp...

Full description

Bibliographic Details
Main Authors: Aaron J. Austin, Elena Echeverria, Phadindra Wagle, Punya Mainali, Derek Meyers, Ashish Kumar Gupta, Ritesh Sachan, S. Prassana, David N. McIlroy
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Nanomaterials
Subjects:
gallium nitride
atomic layer deposition
nanosprings
functional coatings
custom ALD reactor
Online Access:https://www.mdpi.com/2079-4991/10/12/2434

Internet

https://www.mdpi.com/2079-4991/10/12/2434

Similar Items