60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of V<sub>F</sub> with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The...

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Main Authors: Razvan Pascu, Gheorghe Pristavu, Gheorghe Brezeanu, Florin Draghici, Philippe Godignon, Cosmin Romanitan, Matei Serbanescu, Adrian Tulbure
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Sensors
Subjects:
Online Access:https://www.mdpi.com/1424-8220/21/3/942
_version_ 1797417445854543872
author Razvan Pascu
Gheorghe Pristavu
Gheorghe Brezeanu
Florin Draghici
Philippe Godignon
Cosmin Romanitan
Matei Serbanescu
Adrian Tulbure
author_facet Razvan Pascu
Gheorghe Pristavu
Gheorghe Brezeanu
Florin Draghici
Philippe Godignon
Cosmin Romanitan
Matei Serbanescu
Adrian Tulbure
author_sort Razvan Pascu
collection DOAJ
description A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of V<sub>F</sub> with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout places the two identical diodes in close, symmetrical proximity. A stable and high-barrier Schottky contact based on Ni, annealed at 750 °C, is used. XRD analysis evinced the even distribution of Ni<sub>2</sub>Si over the entire Schottky contact area. Forward measurements in the 60–700 K range indicate nearly identical characteristics for the dual-diodes, with only minor inhomogeneity. Our parallel diode (<i>p-diode</i>) model is used to parameterize experimental curves and evaluate sensing performances over this far-reaching domain. High sensitivity, upwards of 2.32 mV/K, is obtained, with satisfactory linearity (R<sup>2</sup> reaching 99.80%) for the CTAT sensor, even down to 60 K. The PTAT differential version boasts increased linearity, up to 99.95%. The lower sensitivity is, in this case, compensated by using a high-performing, low-cost readout circuit, leading to a peak 14.91 mV/K, without influencing linearity.
first_indexed 2024-03-09T06:18:55Z
format Article
id doaj.art-88ddcdc7671242189ac700bb52064fa5
institution Directory Open Access Journal
issn 1424-8220
language English
last_indexed 2024-03-09T06:18:55Z
publishDate 2021-01-01
publisher MDPI AG
record_format Article
series Sensors
spelling doaj.art-88ddcdc7671242189ac700bb52064fa52023-12-03T11:50:18ZengMDPI AGSensors1424-82202021-01-0121394210.3390/s2103094260–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky DiodesRazvan Pascu0Gheorghe Pristavu1Gheorghe Brezeanu2Florin Draghici3Philippe Godignon4Cosmin Romanitan5Matei Serbanescu6Adrian Tulbure7National Institute for Research and Development in Microtechnologies—IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Bucharest, RomaniaFaculty of Electronics, Telecommunications and Information Technology, University “Politehnica” of Bucharest, 060042 Bucharest, RomaniaFaculty of Electronics, Telecommunications and Information Technology, University “Politehnica” of Bucharest, 060042 Bucharest, RomaniaFaculty of Electronics, Telecommunications and Information Technology, University “Politehnica” of Bucharest, 060042 Bucharest, RomaniaCentre Nacional de Microelectrònica, CNM-CSIC, 08193 Barcelona, SpainNational Institute for Research and Development in Microtechnologies—IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Bucharest, RomaniaFaculty of Electronics, Telecommunications and Information Technology, University “Politehnica” of Bucharest, 060042 Bucharest, RomaniaDepartment of Informatics, Mathematics and Electronics, Faculty of Exact Sciences and Engineering, University “1 Decembrie 1918” of Alba Iulia, No. 5, Gabriel Bethlen Street, 510009 Alba Iulia, RomaniaA SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of V<sub>F</sub> with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout places the two identical diodes in close, symmetrical proximity. A stable and high-barrier Schottky contact based on Ni, annealed at 750 °C, is used. XRD analysis evinced the even distribution of Ni<sub>2</sub>Si over the entire Schottky contact area. Forward measurements in the 60–700 K range indicate nearly identical characteristics for the dual-diodes, with only minor inhomogeneity. Our parallel diode (<i>p-diode</i>) model is used to parameterize experimental curves and evaluate sensing performances over this far-reaching domain. High sensitivity, upwards of 2.32 mV/K, is obtained, with satisfactory linearity (R<sup>2</sup> reaching 99.80%) for the CTAT sensor, even down to 60 K. The PTAT differential version boasts increased linearity, up to 99.95%. The lower sensitivity is, in this case, compensated by using a high-performing, low-cost readout circuit, leading to a peak 14.91 mV/K, without influencing linearity.https://www.mdpi.com/1424-8220/21/3/942wide-range temperature sensorSiC-Schottky diodesensitivitylinearityreadout circuit
spellingShingle Razvan Pascu
Gheorghe Pristavu
Gheorghe Brezeanu
Florin Draghici
Philippe Godignon
Cosmin Romanitan
Matei Serbanescu
Adrian Tulbure
60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes
Sensors
wide-range temperature sensor
SiC-Schottky diode
sensitivity
linearity
readout circuit
title 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes
title_full 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes
title_fullStr 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes
title_full_unstemmed 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes
title_short 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes
title_sort 60 700 k ctat and ptat temperature sensors with 4h sic schottky diodes
topic wide-range temperature sensor
SiC-Schottky diode
sensitivity
linearity
readout circuit
url https://www.mdpi.com/1424-8220/21/3/942
work_keys_str_mv AT razvanpascu 60700kctatandptattemperaturesensorswith4hsicschottkydiodes
AT gheorghepristavu 60700kctatandptattemperaturesensorswith4hsicschottkydiodes
AT gheorghebrezeanu 60700kctatandptattemperaturesensorswith4hsicschottkydiodes
AT florindraghici 60700kctatandptattemperaturesensorswith4hsicschottkydiodes
AT philippegodignon 60700kctatandptattemperaturesensorswith4hsicschottkydiodes
AT cosminromanitan 60700kctatandptattemperaturesensorswith4hsicschottkydiodes
AT mateiserbanescu 60700kctatandptattemperaturesensorswith4hsicschottkydiodes
AT adriantulbure 60700kctatandptattemperaturesensorswith4hsicschottkydiodes