60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes
A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of V<sub>F</sub> with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The...
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MDPI AG
2021-01-01
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author | Razvan Pascu Gheorghe Pristavu Gheorghe Brezeanu Florin Draghici Philippe Godignon Cosmin Romanitan Matei Serbanescu Adrian Tulbure |
author_facet | Razvan Pascu Gheorghe Pristavu Gheorghe Brezeanu Florin Draghici Philippe Godignon Cosmin Romanitan Matei Serbanescu Adrian Tulbure |
author_sort | Razvan Pascu |
collection | DOAJ |
description | A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of V<sub>F</sub> with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout places the two identical diodes in close, symmetrical proximity. A stable and high-barrier Schottky contact based on Ni, annealed at 750 °C, is used. XRD analysis evinced the even distribution of Ni<sub>2</sub>Si over the entire Schottky contact area. Forward measurements in the 60–700 K range indicate nearly identical characteristics for the dual-diodes, with only minor inhomogeneity. Our parallel diode (<i>p-diode</i>) model is used to parameterize experimental curves and evaluate sensing performances over this far-reaching domain. High sensitivity, upwards of 2.32 mV/K, is obtained, with satisfactory linearity (R<sup>2</sup> reaching 99.80%) for the CTAT sensor, even down to 60 K. The PTAT differential version boasts increased linearity, up to 99.95%. The lower sensitivity is, in this case, compensated by using a high-performing, low-cost readout circuit, leading to a peak 14.91 mV/K, without influencing linearity. |
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issn | 1424-8220 |
language | English |
last_indexed | 2024-03-09T06:18:55Z |
publishDate | 2021-01-01 |
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spelling | doaj.art-88ddcdc7671242189ac700bb52064fa52023-12-03T11:50:18ZengMDPI AGSensors1424-82202021-01-0121394210.3390/s2103094260–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky DiodesRazvan Pascu0Gheorghe Pristavu1Gheorghe Brezeanu2Florin Draghici3Philippe Godignon4Cosmin Romanitan5Matei Serbanescu6Adrian Tulbure7National Institute for Research and Development in Microtechnologies—IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Bucharest, RomaniaFaculty of Electronics, Telecommunications and Information Technology, University “Politehnica” of Bucharest, 060042 Bucharest, RomaniaFaculty of Electronics, Telecommunications and Information Technology, University “Politehnica” of Bucharest, 060042 Bucharest, RomaniaFaculty of Electronics, Telecommunications and Information Technology, University “Politehnica” of Bucharest, 060042 Bucharest, RomaniaCentre Nacional de Microelectrònica, CNM-CSIC, 08193 Barcelona, SpainNational Institute for Research and Development in Microtechnologies—IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Bucharest, RomaniaFaculty of Electronics, Telecommunications and Information Technology, University “Politehnica” of Bucharest, 060042 Bucharest, RomaniaDepartment of Informatics, Mathematics and Electronics, Faculty of Exact Sciences and Engineering, University “1 Decembrie 1918” of Alba Iulia, No. 5, Gabriel Bethlen Street, 510009 Alba Iulia, RomaniaA SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of V<sub>F</sub> with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout places the two identical diodes in close, symmetrical proximity. A stable and high-barrier Schottky contact based on Ni, annealed at 750 °C, is used. XRD analysis evinced the even distribution of Ni<sub>2</sub>Si over the entire Schottky contact area. Forward measurements in the 60–700 K range indicate nearly identical characteristics for the dual-diodes, with only minor inhomogeneity. Our parallel diode (<i>p-diode</i>) model is used to parameterize experimental curves and evaluate sensing performances over this far-reaching domain. High sensitivity, upwards of 2.32 mV/K, is obtained, with satisfactory linearity (R<sup>2</sup> reaching 99.80%) for the CTAT sensor, even down to 60 K. The PTAT differential version boasts increased linearity, up to 99.95%. The lower sensitivity is, in this case, compensated by using a high-performing, low-cost readout circuit, leading to a peak 14.91 mV/K, without influencing linearity.https://www.mdpi.com/1424-8220/21/3/942wide-range temperature sensorSiC-Schottky diodesensitivitylinearityreadout circuit |
spellingShingle | Razvan Pascu Gheorghe Pristavu Gheorghe Brezeanu Florin Draghici Philippe Godignon Cosmin Romanitan Matei Serbanescu Adrian Tulbure 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes Sensors wide-range temperature sensor SiC-Schottky diode sensitivity linearity readout circuit |
title | 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes |
title_full | 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes |
title_fullStr | 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes |
title_full_unstemmed | 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes |
title_short | 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes |
title_sort | 60 700 k ctat and ptat temperature sensors with 4h sic schottky diodes |
topic | wide-range temperature sensor SiC-Schottky diode sensitivity linearity readout circuit |
url | https://www.mdpi.com/1424-8220/21/3/942 |
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