Probing Optoelectronic and Thermoelectric Properties of Lead-Free Perovskite SnTiO<sub>3</sub>: HSE06 and Boltzmann Transport Calculations

In order to develop a useful material for the optoelectronic sector with a variety of uses in thermoelectric and optical properties at a reasonable price, we researched SnTiO<sub>3</sub>, a Pb-free and Sn-based perovskite. We used the most recent density functional theory (DFT) methods,...

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Main Author: Souraya Goumri-Said
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Crystals
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Online Access:https://www.mdpi.com/2073-4352/12/9/1317
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author Souraya Goumri-Said
author_facet Souraya Goumri-Said
author_sort Souraya Goumri-Said
collection DOAJ
description In order to develop a useful material for the optoelectronic sector with a variety of uses in thermoelectric and optical properties at a reasonable price, we researched SnTiO<sub>3</sub>, a Pb-free and Sn-based perovskite. We used the most recent density functional theory (DFT) methods, such as the gradient approximation (GGA) approach and the screened hybrid functional (HSE06). The calculated electronic structure yields to an indirect band gap of 2.204 eV along with two different K-points such as (X-Γ) using HSE06. The accomplished optical properties have been examined by dispersion, absorption, reflection, optical conductivity, and loss function against photon energy. The thermoelectric properties and electronic fitness function (EFF) were predicted DFT along with the Boltzmann transport theory. The Seebeck coefficient (S) and related thermoelectric properties such as electronic/thermal conductivity and the Hall coefficient were calculated as a function of chemical potential and carrier density (electrons and holes concentration) for room temperature. It was established that the temperature increases the Seebeck coefficient (S) at every hole carrier concentration. SnTiO<sub>3</sub> has good EFF at 300, 500, and 800 K as well. The discovered EFF suggests that this material’s thermoelectric performance rises with temperature and can also be improved through doping. These findings demonstrated the potential of SnTiO<sub>3</sub> as an <i>n</i>-type or <i>p</i>-type thermoelectric material depending on the doping.
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spelling doaj.art-88f0ed3764d14586828b4d06b3caa42e2023-11-23T15:45:04ZengMDPI AGCrystals2073-43522022-09-01129131710.3390/cryst12091317Probing Optoelectronic and Thermoelectric Properties of Lead-Free Perovskite SnTiO<sub>3</sub>: HSE06 and Boltzmann Transport CalculationsSouraya Goumri-Said0College of Science, Physics Department, Alfaisal University, P.O. Box 50927, Riyadh 11533, Saudi ArabiaIn order to develop a useful material for the optoelectronic sector with a variety of uses in thermoelectric and optical properties at a reasonable price, we researched SnTiO<sub>3</sub>, a Pb-free and Sn-based perovskite. We used the most recent density functional theory (DFT) methods, such as the gradient approximation (GGA) approach and the screened hybrid functional (HSE06). The calculated electronic structure yields to an indirect band gap of 2.204 eV along with two different K-points such as (X-Γ) using HSE06. The accomplished optical properties have been examined by dispersion, absorption, reflection, optical conductivity, and loss function against photon energy. The thermoelectric properties and electronic fitness function (EFF) were predicted DFT along with the Boltzmann transport theory. The Seebeck coefficient (S) and related thermoelectric properties such as electronic/thermal conductivity and the Hall coefficient were calculated as a function of chemical potential and carrier density (electrons and holes concentration) for room temperature. It was established that the temperature increases the Seebeck coefficient (S) at every hole carrier concentration. SnTiO<sub>3</sub> has good EFF at 300, 500, and 800 K as well. The discovered EFF suggests that this material’s thermoelectric performance rises with temperature and can also be improved through doping. These findings demonstrated the potential of SnTiO<sub>3</sub> as an <i>n</i>-type or <i>p</i>-type thermoelectric material depending on the doping.https://www.mdpi.com/2073-4352/12/9/1317lead-free perovskiteHSE06@DFT band structureoptical spectrumthermoelectric propertiesHall coefficientelectronic fitness function
spellingShingle Souraya Goumri-Said
Probing Optoelectronic and Thermoelectric Properties of Lead-Free Perovskite SnTiO<sub>3</sub>: HSE06 and Boltzmann Transport Calculations
Crystals
lead-free perovskite
HSE06@DFT band structure
optical spectrum
thermoelectric properties
Hall coefficient
electronic fitness function
title Probing Optoelectronic and Thermoelectric Properties of Lead-Free Perovskite SnTiO<sub>3</sub>: HSE06 and Boltzmann Transport Calculations
title_full Probing Optoelectronic and Thermoelectric Properties of Lead-Free Perovskite SnTiO<sub>3</sub>: HSE06 and Boltzmann Transport Calculations
title_fullStr Probing Optoelectronic and Thermoelectric Properties of Lead-Free Perovskite SnTiO<sub>3</sub>: HSE06 and Boltzmann Transport Calculations
title_full_unstemmed Probing Optoelectronic and Thermoelectric Properties of Lead-Free Perovskite SnTiO<sub>3</sub>: HSE06 and Boltzmann Transport Calculations
title_short Probing Optoelectronic and Thermoelectric Properties of Lead-Free Perovskite SnTiO<sub>3</sub>: HSE06 and Boltzmann Transport Calculations
title_sort probing optoelectronic and thermoelectric properties of lead free perovskite sntio sub 3 sub hse06 and boltzmann transport calculations
topic lead-free perovskite
HSE06@DFT band structure
optical spectrum
thermoelectric properties
Hall coefficient
electronic fitness function
url https://www.mdpi.com/2073-4352/12/9/1317
work_keys_str_mv AT sourayagoumrisaid probingoptoelectronicandthermoelectricpropertiesofleadfreeperovskitesntiosub3subhse06andboltzmanntransportcalculations