Fabrication of Large-Area Molybdenum Disulfide Device Arrays Using Graphene/Ti Contacts
Two-dimensional (2D) molybdenum disulfide (MoS<sub>2</sub>) is the most mature material in 2D material fields owing to its relatively high mobility and scalability. Such noticeable properties enable it to realize practical electronic and optoelectronic applications. However, contact engi...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-07-01
|
| Series: | Molecules |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1420-3049/26/15/4394 |
| _version_ | 1797525324974522368 |
|---|---|
| author | Myungwoo Son Jaewon Jang Dong Chul Kim Seunghyup Lee Hyo-Soon Shin Moon-Ho Ham Sang-Soo Chee |
| author_facet | Myungwoo Son Jaewon Jang Dong Chul Kim Seunghyup Lee Hyo-Soon Shin Moon-Ho Ham Sang-Soo Chee |
| author_sort | Myungwoo Son |
| collection | DOAJ |
| description | Two-dimensional (2D) molybdenum disulfide (MoS<sub>2</sub>) is the most mature material in 2D material fields owing to its relatively high mobility and scalability. Such noticeable properties enable it to realize practical electronic and optoelectronic applications. However, contact engineering for large-area MoS<sub>2</sub> films has not yet been established, although contact property is directly associated to the device performance. Herein, we introduce graphene-interlayered Ti contacts (graphene/Ti) into large-area MoS<sub>2</sub> device arrays using a wet-transfer method. We achieve MoS<sub>2</sub> devices with superior electrical and photoelectrical properties using graphene/Ti contacts, with a field-effect mobility of 18.3 cm<sup>2</sup>/V∙s, on/off current ratio of 3 × 10<sup>7</sup>, responsivity of 850 A/W, and detectivity of 2 × 10<sup>12</sup> Jones. This outstanding performance is attributable to a reduction in the Schottky barrier height of the resultant devices, which arises from the decreased work function of graphene induced by the charge transfer from Ti. Our research offers a direction toward large-scale electronic and optoelectronic applications based on 2D materials. |
| first_indexed | 2024-03-10T09:12:10Z |
| format | Article |
| id | doaj.art-88febe074550431692284397ac415ee4 |
| institution | Directory Open Access Journal |
| issn | 1420-3049 |
| language | English |
| last_indexed | 2024-03-10T09:12:10Z |
| publishDate | 2021-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Molecules |
| spelling | doaj.art-88febe074550431692284397ac415ee42023-11-22T05:57:27ZengMDPI AGMolecules1420-30492021-07-012615439410.3390/molecules26154394Fabrication of Large-Area Molybdenum Disulfide Device Arrays Using Graphene/Ti ContactsMyungwoo Son0Jaewon Jang1Dong Chul Kim2Seunghyup Lee3Hyo-Soon Shin4Moon-Ho Ham5Sang-Soo Chee6Artificial Intelligence and Energy Research Center, Korea Photonics Technology Institute (KOPTI), Gwangju 61007, KoreaGwangju Institute of Science and Technology (GIST), School of Earth Sciences and Environmental Engineering (SESE), Gwangju 61005, KoreaNanomaterials and Nanotechnology Center, Korea Institute of Ceramic Engineering and Technology (KICET), Jinju-si 52851, KoreaNanomaterials and Nanotechnology Center, Korea Institute of Ceramic Engineering and Technology (KICET), Jinju-si 52851, KoreaNanomaterials and Nanotechnology Center, Korea Institute of Ceramic Engineering and Technology (KICET), Jinju-si 52851, KoreaGwangju Institute of Science and Technology (GIST), School of Materials Science and Engineering, Gwangju 61005, KoreaNanomaterials and Nanotechnology Center, Korea Institute of Ceramic Engineering and Technology (KICET), Jinju-si 52851, KoreaTwo-dimensional (2D) molybdenum disulfide (MoS<sub>2</sub>) is the most mature material in 2D material fields owing to its relatively high mobility and scalability. Such noticeable properties enable it to realize practical electronic and optoelectronic applications. However, contact engineering for large-area MoS<sub>2</sub> films has not yet been established, although contact property is directly associated to the device performance. Herein, we introduce graphene-interlayered Ti contacts (graphene/Ti) into large-area MoS<sub>2</sub> device arrays using a wet-transfer method. We achieve MoS<sub>2</sub> devices with superior electrical and photoelectrical properties using graphene/Ti contacts, with a field-effect mobility of 18.3 cm<sup>2</sup>/V∙s, on/off current ratio of 3 × 10<sup>7</sup>, responsivity of 850 A/W, and detectivity of 2 × 10<sup>12</sup> Jones. This outstanding performance is attributable to a reduction in the Schottky barrier height of the resultant devices, which arises from the decreased work function of graphene induced by the charge transfer from Ti. Our research offers a direction toward large-scale electronic and optoelectronic applications based on 2D materials.https://www.mdpi.com/1420-3049/26/15/4394MoS<sub>2</sub>grapheneinterlayermetal contactslarge-area |
| spellingShingle | Myungwoo Son Jaewon Jang Dong Chul Kim Seunghyup Lee Hyo-Soon Shin Moon-Ho Ham Sang-Soo Chee Fabrication of Large-Area Molybdenum Disulfide Device Arrays Using Graphene/Ti Contacts Molecules MoS<sub>2</sub> graphene interlayer metal contacts large-area |
| title | Fabrication of Large-Area Molybdenum Disulfide Device Arrays Using Graphene/Ti Contacts |
| title_full | Fabrication of Large-Area Molybdenum Disulfide Device Arrays Using Graphene/Ti Contacts |
| title_fullStr | Fabrication of Large-Area Molybdenum Disulfide Device Arrays Using Graphene/Ti Contacts |
| title_full_unstemmed | Fabrication of Large-Area Molybdenum Disulfide Device Arrays Using Graphene/Ti Contacts |
| title_short | Fabrication of Large-Area Molybdenum Disulfide Device Arrays Using Graphene/Ti Contacts |
| title_sort | fabrication of large area molybdenum disulfide device arrays using graphene ti contacts |
| topic | MoS<sub>2</sub> graphene interlayer metal contacts large-area |
| url | https://www.mdpi.com/1420-3049/26/15/4394 |
| work_keys_str_mv | AT myungwooson fabricationoflargeareamolybdenumdisulfidedevicearraysusinggrapheneticontacts AT jaewonjang fabricationoflargeareamolybdenumdisulfidedevicearraysusinggrapheneticontacts AT dongchulkim fabricationoflargeareamolybdenumdisulfidedevicearraysusinggrapheneticontacts AT seunghyuplee fabricationoflargeareamolybdenumdisulfidedevicearraysusinggrapheneticontacts AT hyosoonshin fabricationoflargeareamolybdenumdisulfidedevicearraysusinggrapheneticontacts AT moonhoham fabricationoflargeareamolybdenumdisulfidedevicearraysusinggrapheneticontacts AT sangsoochee fabricationoflargeareamolybdenumdisulfidedevicearraysusinggrapheneticontacts |