Catalytic metal-gate field effect transistors based on SiC for indoor air quality control
High-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoor air quality monitoring and control. Formaldehyde, naphthalene, and benzene were studie...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Copernicus Publications
2015-01-01
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| Series: | Journal of Sensors and Sensor Systems |
| Online Access: | http://www.j-sens-sens-syst.net/4/1/2015/jsss-4-1-2015.pdf |
| _version_ | 1819144354345779200 |
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| author | D. Puglisi J. Eriksson C. Bur A. Schuetze A. Lloyd Spetz M. Andersson |
| author_facet | D. Puglisi J. Eriksson C. Bur A. Schuetze A. Lloyd Spetz M. Andersson |
| author_sort | D. Puglisi |
| collection | DOAJ |
| description | High-temperature iridium-gated field effect transistors based on silicon
carbide have been used for sensitive detection of specific volatile organic
compounds (VOCs) in concentrations of health concern, for indoor air quality
monitoring and control. Formaldehyde, naphthalene, and benzene were studied
as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The
sensor performance and characteristics were investigated at a constant
temperature of 330 °C and at different levels of relative humidity up
to 60%, showing good stability and repeatability of the sensor response,
and excellent detection limits in the sub-ppb range. |
| first_indexed | 2024-12-22T12:40:48Z |
| format | Article |
| id | doaj.art-8936fb7d32f6425083333413786fddfe |
| institution | Directory Open Access Journal |
| issn | 2194-8771 2194-878X |
| language | English |
| last_indexed | 2024-12-22T12:40:48Z |
| publishDate | 2015-01-01 |
| publisher | Copernicus Publications |
| record_format | Article |
| series | Journal of Sensors and Sensor Systems |
| spelling | doaj.art-8936fb7d32f6425083333413786fddfe2022-12-21T18:25:26ZengCopernicus PublicationsJournal of Sensors and Sensor Systems2194-87712194-878X2015-01-01411810.5194/jsss-4-1-2015Catalytic metal-gate field effect transistors based on SiC for indoor air quality controlD. Puglisi0J. Eriksson1C. Bur2A. Schuetze3A. Lloyd Spetz4M. Andersson5Department of Physics, Chemistry and Biology, Applied Sensor Science, Linköping University, 58183 Linköping, SwedenDepartment of Physics, Chemistry and Biology, Applied Sensor Science, Linköping University, 58183 Linköping, SwedenDepartment of Physics, Chemistry and Biology, Applied Sensor Science, Linköping University, 58183 Linköping, SwedenDepartment of Physics and Mechatronics Engineering, Lab for Measurement Technology, Saarland University, 66123 Saarbruecken, GermanyDepartment of Physics, Chemistry and Biology, Applied Sensor Science, Linköping University, 58183 Linköping, SwedenDepartment of Physics, Chemistry and Biology, Applied Sensor Science, Linköping University, 58183 Linköping, SwedenHigh-temperature iridium-gated field effect transistors based on silicon carbide have been used for sensitive detection of specific volatile organic compounds (VOCs) in concentrations of health concern, for indoor air quality monitoring and control. Formaldehyde, naphthalene, and benzene were studied as hazardous VOCs at parts per billion (ppb) down to sub-ppb levels. The sensor performance and characteristics were investigated at a constant temperature of 330 °C and at different levels of relative humidity up to 60%, showing good stability and repeatability of the sensor response, and excellent detection limits in the sub-ppb range.http://www.j-sens-sens-syst.net/4/1/2015/jsss-4-1-2015.pdf |
| spellingShingle | D. Puglisi J. Eriksson C. Bur A. Schuetze A. Lloyd Spetz M. Andersson Catalytic metal-gate field effect transistors based on SiC for indoor air quality control Journal of Sensors and Sensor Systems |
| title | Catalytic metal-gate field effect transistors based on SiC for indoor air quality control |
| title_full | Catalytic metal-gate field effect transistors based on SiC for indoor air quality control |
| title_fullStr | Catalytic metal-gate field effect transistors based on SiC for indoor air quality control |
| title_full_unstemmed | Catalytic metal-gate field effect transistors based on SiC for indoor air quality control |
| title_short | Catalytic metal-gate field effect transistors based on SiC for indoor air quality control |
| title_sort | catalytic metal gate field effect transistors based on sic for indoor air quality control |
| url | http://www.j-sens-sens-syst.net/4/1/2015/jsss-4-1-2015.pdf |
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