Electric field induced magnetization reversal in magnet/insulator nanoheterostructure
Electric-field control of magnetization reversal is promising for low-power spintronics. Here in a magnet/insulator nanoheterostructure which is the fundamental unit of magnetic tunneling junction in spintronics, we demonstrate the electric field induced 180$$^ \circ $$ magnetization switching throu...
Main Authors: | , , |
---|---|
Format: | Article |
Language: | English |
Published: |
Taylor & Francis Group
2020-07-01
|
Series: | International Journal of Smart and Nano Materials |
Subjects: | |
Online Access: | http://dx.doi.org/10.1080/19475411.2020.1815132 |
Summary: | Electric-field control of magnetization reversal is promising for low-power spintronics. Here in a magnet/insulator nanoheterostructure which is the fundamental unit of magnetic tunneling junction in spintronics, we demonstrate the electric field induced 180$$^ \circ $$ magnetization switching through a multiscale study combining first-principles calculations and finite-temperature magnetization dynamics. In the model nanoheterostructure MgO/Fe/Cu with insulator MgO, soft nanomagnet Fe and capping layer Cu, through first-principles calculations we find its magnetocrystalline anisotropy linearly varying with the electric field. Using finite-temperature magnetization dynamics which is informed by the first-principles results, we disclose that a room-temperature 180$$^ \circ $$ magnetization switching with switching probability higher than 90% is achievable by controlling the electric-field pulse and the nanoheterostructure size. The 180$$^ \circ $$ switching could be fast realized within 5 ns. This study is useful for the design of low-power, fast, and miniaturized nanoscale electric-field-controlled spintronics. |
---|---|
ISSN: | 1947-5411 1947-542X |