Electric field induced magnetization reversal in magnet/insulator nanoheterostructure
Electric-field control of magnetization reversal is promising for low-power spintronics. Here in a magnet/insulator nanoheterostructure which is the fundamental unit of magnetic tunneling junction in spintronics, we demonstrate the electric field induced 180$$^ \circ $$ magnetization switching throu...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2020-07-01
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| Series: | International Journal of Smart and Nano Materials |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/19475411.2020.1815132 |
| _version_ | 1819161857762525184 |
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| author | Qihua Gong Min Yi Bai-Xiang Xu |
| author_facet | Qihua Gong Min Yi Bai-Xiang Xu |
| author_sort | Qihua Gong |
| collection | DOAJ |
| description | Electric-field control of magnetization reversal is promising for low-power spintronics. Here in a magnet/insulator nanoheterostructure which is the fundamental unit of magnetic tunneling junction in spintronics, we demonstrate the electric field induced 180$$^ \circ $$ magnetization switching through a multiscale study combining first-principles calculations and finite-temperature magnetization dynamics. In the model nanoheterostructure MgO/Fe/Cu with insulator MgO, soft nanomagnet Fe and capping layer Cu, through first-principles calculations we find its magnetocrystalline anisotropy linearly varying with the electric field. Using finite-temperature magnetization dynamics which is informed by the first-principles results, we disclose that a room-temperature 180$$^ \circ $$ magnetization switching with switching probability higher than 90% is achievable by controlling the electric-field pulse and the nanoheterostructure size. The 180$$^ \circ $$ switching could be fast realized within 5 ns. This study is useful for the design of low-power, fast, and miniaturized nanoscale electric-field-controlled spintronics. |
| first_indexed | 2024-12-22T17:19:01Z |
| format | Article |
| id | doaj.art-89376e0e953d471290b373af44a48a39 |
| institution | Directory Open Access Journal |
| issn | 1947-5411 1947-542X |
| language | English |
| last_indexed | 2024-12-22T17:19:01Z |
| publishDate | 2020-07-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | International Journal of Smart and Nano Materials |
| spelling | doaj.art-89376e0e953d471290b373af44a48a392022-12-21T18:18:54ZengTaylor & Francis GroupInternational Journal of Smart and Nano Materials1947-54111947-542X2020-07-0111329830910.1080/19475411.2020.18151321815132Electric field induced magnetization reversal in magnet/insulator nanoheterostructureQihua Gong0Min Yi1Bai-Xiang Xu2Technische Universität DarmstadtNanjing University of Aeronautics and Astronautics (NUAA)Technische Universität DarmstadtElectric-field control of magnetization reversal is promising for low-power spintronics. Here in a magnet/insulator nanoheterostructure which is the fundamental unit of magnetic tunneling junction in spintronics, we demonstrate the electric field induced 180$$^ \circ $$ magnetization switching through a multiscale study combining first-principles calculations and finite-temperature magnetization dynamics. In the model nanoheterostructure MgO/Fe/Cu with insulator MgO, soft nanomagnet Fe and capping layer Cu, through first-principles calculations we find its magnetocrystalline anisotropy linearly varying with the electric field. Using finite-temperature magnetization dynamics which is informed by the first-principles results, we disclose that a room-temperature 180$$^ \circ $$ magnetization switching with switching probability higher than 90% is achievable by controlling the electric-field pulse and the nanoheterostructure size. The 180$$^ \circ $$ switching could be fast realized within 5 ns. This study is useful for the design of low-power, fast, and miniaturized nanoscale electric-field-controlled spintronics.http://dx.doi.org/10.1080/19475411.2020.1815132magnetization reversalnanoheterostructureelectric fieldspintronicsmultiscale simulationsswitching probability |
| spellingShingle | Qihua Gong Min Yi Bai-Xiang Xu Electric field induced magnetization reversal in magnet/insulator nanoheterostructure International Journal of Smart and Nano Materials magnetization reversal nanoheterostructure electric field spintronics multiscale simulations switching probability |
| title | Electric field induced magnetization reversal in magnet/insulator nanoheterostructure |
| title_full | Electric field induced magnetization reversal in magnet/insulator nanoheterostructure |
| title_fullStr | Electric field induced magnetization reversal in magnet/insulator nanoheterostructure |
| title_full_unstemmed | Electric field induced magnetization reversal in magnet/insulator nanoheterostructure |
| title_short | Electric field induced magnetization reversal in magnet/insulator nanoheterostructure |
| title_sort | electric field induced magnetization reversal in magnet insulator nanoheterostructure |
| topic | magnetization reversal nanoheterostructure electric field spintronics multiscale simulations switching probability |
| url | http://dx.doi.org/10.1080/19475411.2020.1815132 |
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