Effect of annealing atmosphere on optical, electrical properties and microstructure of ZnO∶Al films
In this study, the effect of annealing atmosphere on the electrical properties, optical properties, microstructure and defects of ZnO∶Al films was investigated in detail. The crystallization, surface and fracture morphologies, electrical properties, resistivity, transmittance, Raman vibration and ph...
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| Format: | Article |
| Language: | zho |
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Journal of Aeronautical Materials
2021-08-01
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| Series: | Journal of Aeronautical Materials |
| Subjects: | |
| Online Access: | http://jam.biam.ac.cn/article/doi/10.11868/j.issn.1005-5053.2021.000001 |
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| author | HAO Changshan PENG Jingjing LEI Pei ZHONG Yanli ZHANG Xuan JI Jianchao HUO Zhongqi |
| author_facet | HAO Changshan PENG Jingjing LEI Pei ZHONG Yanli ZHANG Xuan JI Jianchao HUO Zhongqi |
| author_sort | HAO Changshan |
| collection | DOAJ |
| description | In this study, the effect of annealing atmosphere on the electrical properties, optical properties, microstructure and defects of ZnO∶Al films was investigated in detail. The crystallization, surface and fracture morphologies, electrical properties, resistivity, transmittance, Raman vibration and photoluminescence of ZnO∶Al films were characterized by SEM, XRD, Hall effect test instruments, ultraviolet-visible spectrophotometer, Raman spectra and PL spectra. The results show that after annealing in air atmosphere, the carrier concentration of AZO films decreases from 1.63 × 1020 cm−3 to 7.1 × 1018 cm−3, the optical band gap varies from 3.51 eV to 3.37 eV, the transmittance in NIR increased and the band edge emission in PL spectrum shifted from 3.49 eV to 3.34 eV. On the other hand, while the carrier concentration of AZO films annealing in H2 atmosphere was 5.3 × 1020 cm-3, the optical band gap increases to 3.78 eV, the transmittance in NIR decreases remarkably, the emission intensity of the band edge increases by more than 10 times and the band edge emission in PL spectrum shifts to 3.57 eV. Furthermore, the 4 order LO phonons are observed in ZnO:Al films annealed in air. |
| first_indexed | 2024-12-17T19:34:56Z |
| format | Article |
| id | doaj.art-8964bf8f1c5240faaa01bb0adf9d9b4a |
| institution | Directory Open Access Journal |
| issn | 1005-5053 |
| language | zho |
| last_indexed | 2024-12-17T19:34:56Z |
| publishDate | 2021-08-01 |
| publisher | Journal of Aeronautical Materials |
| record_format | Article |
| series | Journal of Aeronautical Materials |
| spelling | doaj.art-8964bf8f1c5240faaa01bb0adf9d9b4a2022-12-21T21:35:09ZzhoJournal of Aeronautical MaterialsJournal of Aeronautical Materials1005-50532021-08-0141413414010.11868/j.issn.1005-5053.2021.000001a2021-0001Effect of annealing atmosphere on optical, electrical properties and microstructure of ZnO∶Al filmsHAO Changshan0PENG Jingjing1LEI Pei2ZHONG Yanli3ZHANG Xuan4JI Jianchao5HUO Zhongqi6AECC Beijing Institute of Aeronautical Materials，Beijing 100095，ChinaAECC Beijing Institute of Aeronautical Materials，Beijing 100095，ChinaAECC Beijing Institute of Aeronautical Materials，Beijing 100095，ChinaAECC Beijing Institute of Aeronautical Materials，Beijing 100095，ChinaAECC Beijing Institute of Aeronautical Materials，Beijing 100095，ChinaAECC Beijing Institute of Aeronautical Materials，Beijing 100095，ChinaAECC Beijing Institute of Aeronautical Materials，Beijing 100095，ChinaIn this study, the effect of annealing atmosphere on the electrical properties, optical properties, microstructure and defects of ZnO∶Al films was investigated in detail. The crystallization, surface and fracture morphologies, electrical properties, resistivity, transmittance, Raman vibration and photoluminescence of ZnO∶Al films were characterized by SEM, XRD, Hall effect test instruments, ultraviolet-visible spectrophotometer, Raman spectra and PL spectra. The results show that after annealing in air atmosphere, the carrier concentration of AZO films decreases from 1.63 × 1020 cm−3 to 7.1 × 1018 cm−3, the optical band gap varies from 3.51 eV to 3.37 eV, the transmittance in NIR increased and the band edge emission in PL spectrum shifted from 3.49 eV to 3.34 eV. On the other hand, while the carrier concentration of AZO films annealing in H2 atmosphere was 5.3 × 1020 cm-3, the optical band gap increases to 3.78 eV, the transmittance in NIR decreases remarkably, the emission intensity of the band edge increases by more than 10 times and the band edge emission in PL spectrum shifts to 3.57 eV. Furthermore, the 4 order LO phonons are observed in ZnO:Al films annealed in air.http://jam.biam.ac.cn/article/doi/10.11868/j.issn.1005-5053.2021.000001zno∶al filmsannealingcarrier concentrationoptical band gap |
| spellingShingle | HAO Changshan PENG Jingjing LEI Pei ZHONG Yanli ZHANG Xuan JI Jianchao HUO Zhongqi Effect of annealing atmosphere on optical, electrical properties and microstructure of ZnO∶Al films Journal of Aeronautical Materials zno∶al films annealing carrier concentration optical band gap |
| title | Effect of annealing atmosphere on optical, electrical properties and microstructure of ZnO∶Al films |
| title_full | Effect of annealing atmosphere on optical, electrical properties and microstructure of ZnO∶Al films |
| title_fullStr | Effect of annealing atmosphere on optical, electrical properties and microstructure of ZnO∶Al films |
| title_full_unstemmed | Effect of annealing atmosphere on optical, electrical properties and microstructure of ZnO∶Al films |
| title_short | Effect of annealing atmosphere on optical, electrical properties and microstructure of ZnO∶Al films |
| title_sort | effect of annealing atmosphere on optical electrical properties and microstructure of zno∶al films |
| topic | zno∶al films annealing carrier concentration optical band gap |
| url | http://jam.biam.ac.cn/article/doi/10.11868/j.issn.1005-5053.2021.000001 |
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