27 TECHNOLOGY AND DEVICE NANOSCALE MOSFETS SIMULATION
Current-voltage characteristics of MOSFET are obtained by computer simulation and their analysis is performed. The inadequacy of the classical models for simulation of nanoscale structures is revealed, as well as the unsuitability methods of direct quantum description for studies requiring a large n...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/370 |
| _version_ | 1797881154150334464 |
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| author | T. T. Trung A. M. Borovik I. Yu. Lovshenko V. R. Stempitsky A. A. Kuleshov |
| author_facet | T. T. Trung A. M. Borovik I. Yu. Lovshenko V. R. Stempitsky A. A. Kuleshov |
| author_sort | T. T. Trung |
| collection | DOAJ |
| description | Current-voltage characteristics of MOSFET are obtained by computer simulation and their analysis is performed. The inadequacy of the classical models for simulation of nanoscale structures is revealed, as well as the unsuitability methods of direct quantum description for studies requiring a large number of computer experiments is detected. |
| first_indexed | 2024-04-10T03:14:38Z |
| format | Article |
| id | doaj.art-898451cf7fd84dc3a7acd771d69738b2 |
| institution | Directory Open Access Journal |
| issn | 1729-7648 |
| language | Russian |
| last_indexed | 2024-04-10T03:14:38Z |
| publishDate | 2019-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj.art-898451cf7fd84dc3a7acd771d69738b22023-03-13T07:33:14ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-0107212736927 TECHNOLOGY AND DEVICE NANOSCALE MOSFETS SIMULATIONT. T. Trung0A. M. Borovik1I. Yu. Lovshenko2V. R. Stempitsky3A. A. Kuleshov4Белорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиCurrent-voltage characteristics of MOSFET are obtained by computer simulation and their analysis is performed. The inadequacy of the classical models for simulation of nanoscale structures is revealed, as well as the unsuitability methods of direct quantum description for studies requiring a large number of computer experiments is detected.https://doklady.bsuir.by/jour/article/view/370наноразмерный моп-транзистормоделированиеквантовая коррекция |
| spellingShingle | T. T. Trung A. M. Borovik I. Yu. Lovshenko V. R. Stempitsky A. A. Kuleshov 27 TECHNOLOGY AND DEVICE NANOSCALE MOSFETS SIMULATION Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki наноразмерный моп-транзистор моделирование квантовая коррекция |
| title | 27 TECHNOLOGY AND DEVICE NANOSCALE MOSFETS SIMULATION |
| title_full | 27 TECHNOLOGY AND DEVICE NANOSCALE MOSFETS SIMULATION |
| title_fullStr | 27 TECHNOLOGY AND DEVICE NANOSCALE MOSFETS SIMULATION |
| title_full_unstemmed | 27 TECHNOLOGY AND DEVICE NANOSCALE MOSFETS SIMULATION |
| title_short | 27 TECHNOLOGY AND DEVICE NANOSCALE MOSFETS SIMULATION |
| title_sort | 27 technology and device nanoscale mosfets simulation |
| topic | наноразмерный моп-транзистор моделирование квантовая коррекция |
| url | https://doklady.bsuir.by/jour/article/view/370 |
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