27 TECHNOLOGY AND DEVICE NANOSCALE MOSFETS SIMULATION

27 TECHNOLOGY AND DEVICE NANOSCALE MOSFETS SIMULATION

Current-voltage characteristics of MOSFET are obtained by computer simulation and their analysis is performed. The inadequacy of the classical models for simulation of nanoscale structures is revealed, as well as the unsuitability methods of direct quantum description for studies requiring a large n...

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Bibliographic Details
Main Authors: T. T. Trung, A. M. Borovik, I. Yu. Lovshenko, V. R. Stempitsky, A. A. Kuleshov
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
наноразмерный моп-транзистор
моделирование
квантовая коррекция
Online Access:https://doklady.bsuir.by/jour/article/view/370

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