High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes
Silicon carbide (SiC) has been widely used for electronic radiation detectors and atomic battery sensors. However, the physical properties of SiC exposure to high-dose irradiation as well as its related electrical responses are not yet well understood. Meanwhile, the current research in this field a...
Main Authors: | Guixia Yang, Yuanlong Pang, Yuqing Yang, Jianyong Liu, Shuming Peng, Gang Chen, Ming Jiang, Xiaotao Zu, Xuan Fang, Hongbin Zhao, Liang Qiao, Haiyan Xiao |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2019-02-01
|
Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/9/2/194 |
Similar Items
-
Electron irradiation effects and room-temperature annealing mechanisms for SiC MOSFETs
by: Mu He, et al.
Published: (2024-05-01) -
State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz
by: Rahul Yadav, et al.
Published: (2023-03-01) -
Unexpected Room Temperature Ferromagnetism of a Ball-Milled Graphene Oxide—Melamine Mixture
by: Vladimir P. Vasiliev, et al.
Published: (2022-11-01) -
Modeling the schottky barrier properties of graphene nanoribbon schottky diode
by: Wong, King Kiat
Published: (2014) -
Fabrication and characterization of silicon-germanium schottky diode
by: Chakravarthi Nanda Kumar
Published: (2010)