Electrical characteristics of ZnxIn2S3+x single crystals
The electrophysical characteristics, including the Hall effect, of the family of layered ZnxIn2S3 x (x = 1, 2, and 3) compounds were studied in a temperature range of 250–500 K ( C). They were interpreted taking into account an exponential distribution of traps near...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2011-06-01
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| Series: | Moldavian Journal of the Physical Sciences |
| Online Access: | https://mjps.nanotech.md/archive/2011/article/4366 |
| _version_ | 1819291116317442048 |
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| author | Jitari, Vasile Şemeacova, Tatiana |
| author_facet | Jitari, Vasile Şemeacova, Tatiana |
| author_sort | Jitari, Vasile |
| collection | DOAJ |
| description | The electrophysical characteristics, including the Hall effect, of the family of layered
ZnxIn2S3 x (x = 1, 2, and 3) compounds were studied in a temperature range of 250–500 K ( C). They were interpreted taking into account an exponential distribution of traps near the
conduction band. The main parameters of the material were determined, and the way was shown
how they can be varied. |
| first_indexed | 2024-12-24T03:33:31Z |
| format | Article |
| id | doaj.art-89d5d131e8e440c2a3d39b69d1a42c7e |
| institution | Directory Open Access Journal |
| issn | 1810-648X 2537-6365 |
| language | English |
| last_indexed | 2024-12-24T03:33:31Z |
| publishDate | 2011-06-01 |
| publisher | D.Ghitu Institute of Electronic Engineering and Nanotechnologies |
| record_format | Article |
| series | Moldavian Journal of the Physical Sciences |
| spelling | doaj.art-89d5d131e8e440c2a3d39b69d1a42c7e2022-12-21T17:17:07ZengD.Ghitu Institute of Electronic Engineering and NanotechnologiesMoldavian Journal of the Physical Sciences1810-648X2537-63652011-06-011021861884366Electrical characteristics of ZnxIn2S3+x single crystalsJitari, VasileŞemeacova, TatianaThe electrophysical characteristics, including the Hall effect, of the family of layered ZnxIn2S3 x (x = 1, 2, and 3) compounds were studied in a temperature range of 250–500 K ( C). They were interpreted taking into account an exponential distribution of traps near the conduction band. The main parameters of the material were determined, and the way was shown how they can be varied.https://mjps.nanotech.md/archive/2011/article/4366 |
| spellingShingle | Jitari, Vasile Şemeacova, Tatiana Electrical characteristics of ZnxIn2S3+x single crystals Moldavian Journal of the Physical Sciences |
| title | Electrical characteristics of ZnxIn2S3+x single crystals |
| title_full | Electrical characteristics of ZnxIn2S3+x single crystals |
| title_fullStr | Electrical characteristics of ZnxIn2S3+x single crystals |
| title_full_unstemmed | Electrical characteristics of ZnxIn2S3+x single crystals |
| title_short | Electrical characteristics of ZnxIn2S3+x single crystals |
| title_sort | electrical characteristics of znxin2s3 x single crystals |
| url | https://mjps.nanotech.md/archive/2011/article/4366 |
| work_keys_str_mv | AT jitarivasile electricalcharacteristicsofznxin2s3xsinglecrystals AT semeacovatatiana electricalcharacteristicsofznxin2s3xsinglecrystals |