Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors
Abstract Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The In2O3 films can be deposited preferentially at relatively low temperatures of 160–200 °C, exhibiting a stable growth rate of 1.4–1.5 Å...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2018-01-01
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| Series: | Nanoscale Research Letters |
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| Online Access: | http://link.springer.com/article/10.1186/s11671-017-2414-0 |
| _version_ | 1827834560440696832 |
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| author | Qian Ma He-Mei Zheng Yan Shao Bao Zhu Wen-Jun Liu Shi-Jin Ding David Wei Zhang |
| author_facet | Qian Ma He-Mei Zheng Yan Shao Bao Zhu Wen-Jun Liu Shi-Jin Ding David Wei Zhang |
| author_sort | Qian Ma |
| collection | DOAJ |
| description | Abstract Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The In2O3 films can be deposited preferentially at relatively low temperatures of 160–200 °C, exhibiting a stable growth rate of 1.4–1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which is attributed to the enhanced crystallization of the film at a higher deposition temperature. As the deposition temperature increases from 150 to 200 °C, the optical band gap (Eg) of the deposited film rises from 3.42 to 3.75 eV. In addition, with the increase of deposition temperature, the atomic ratio of In to O in the as-deposited film gradually shifts towards that in the stoichiometric In2O3, and the carbon content also reduces by degrees. For 200 °C deposition temperature, the deposited film exhibits an In:O ratio of 1:1.36 and no carbon incorporation. Further, high-performance In2O3 thin-film transistors with an Al2O3 gate dielectric were achieved by post-annealing in air at 300 °C for appropriate time, demonstrating a field-effect mobility of 7.8 cm2/V⋅s, a subthreshold swing of 0.32 V/dec, and an on/off current ratio of 107. This was ascribed to passivation of oxygen vacancies in the device channel. |
| first_indexed | 2024-03-12T05:52:39Z |
| format | Article |
| id | doaj.art-8a03493bfaca4b88a084287f9eebaa5b |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T05:52:39Z |
| publishDate | 2018-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-8a03493bfaca4b88a084287f9eebaa5b2023-09-03T04:58:23ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2018-01-011311810.1186/s11671-017-2414-0Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film TransistorsQian Ma0He-Mei Zheng1Yan Shao2Bao Zhu3Wen-Jun Liu4Shi-Jin Ding5David Wei Zhang6State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan UniversityState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan UniversityState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan UniversityState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan UniversityState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan UniversityState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan UniversityState Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan UniversityAbstract Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The In2O3 films can be deposited preferentially at relatively low temperatures of 160–200 °C, exhibiting a stable growth rate of 1.4–1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which is attributed to the enhanced crystallization of the film at a higher deposition temperature. As the deposition temperature increases from 150 to 200 °C, the optical band gap (Eg) of the deposited film rises from 3.42 to 3.75 eV. In addition, with the increase of deposition temperature, the atomic ratio of In to O in the as-deposited film gradually shifts towards that in the stoichiometric In2O3, and the carbon content also reduces by degrees. For 200 °C deposition temperature, the deposited film exhibits an In:O ratio of 1:1.36 and no carbon incorporation. Further, high-performance In2O3 thin-film transistors with an Al2O3 gate dielectric were achieved by post-annealing in air at 300 °C for appropriate time, demonstrating a field-effect mobility of 7.8 cm2/V⋅s, a subthreshold swing of 0.32 V/dec, and an on/off current ratio of 107. This was ascribed to passivation of oxygen vacancies in the device channel.http://link.springer.com/article/10.1186/s11671-017-2414-0Atomic layer depositionLow deposition temperatureIn2O3Thin-film transistors |
| spellingShingle | Qian Ma He-Mei Zheng Yan Shao Bao Zhu Wen-Jun Liu Shi-Jin Ding David Wei Zhang Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors Nanoscale Research Letters Atomic layer deposition Low deposition temperature In2O3 Thin-film transistors |
| title | Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors |
| title_full | Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors |
| title_fullStr | Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors |
| title_full_unstemmed | Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors |
| title_short | Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors |
| title_sort | atomic layer deposition of indium oxide nano films for thin film transistors |
| topic | Atomic layer deposition Low deposition temperature In2O3 Thin-film transistors |
| url | http://link.springer.com/article/10.1186/s11671-017-2414-0 |
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