Optimal Conditions for the Deposition of Gold Nanofilms on a Silicon by Galvanic Replacement Method
<p class="1">The formation conditions of gold nanofilms on a silicon (Si) substrate by galvanic replacement in a dimethyl sulfoxide (DMSO) solvent and their subsequent use for the fabrication of Si nanostructures by metal-assisted chemical etching (MACE) method were under study. We f...
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| Format: | Article |
| Language: | English |
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Vasyl Stefanyk Precarpathian National University
2019-10-01
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| Series: | Фізика і хімія твердого тіла |
| Subjects: | |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/3908 |
| _version_ | 1828390335979454464 |
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| author | S. I. Nichkalo M. V. Shepida M. V. Chekaylo |
| author_facet | S. I. Nichkalo M. V. Shepida M. V. Chekaylo |
| author_sort | S. I. Nichkalo |
| collection | DOAJ |
| description | <p class="1">The formation conditions of gold nanofilms on a silicon (Si) substrate by galvanic replacement in a dimethyl sulfoxide (DMSO) solvent and their subsequent use for the fabrication of Si nanostructures by metal-assisted chemical etching (MACE) method were under study. We found that the average size and number of Au nanoparticles increase with an increase in the reducible metal ion concentration from 2 to 8 mM HAuCl<sub>4</sub> in DMSO, whereas the distribution of Au nanoparticles in height remains low for all concentrations of the reducible metal. In the temperature range 40-70 °C, a different morphology of the deposited Au nanofilms observed. In particular, at 40 °C, the film is porous mainly homogeneous, whereas at a temperature of 50 °C the film is rougher. The subsequent rise in temperature from 60 °C to 70 °C results in the formation of Au nanofilm with a discontinuous morphology. It was established that regardless of the morphology of deposited Au nanofilms, the Si nanostructures maintain a vertical orientation to the plane of the Si substrate during MACE-etching. The produced Si nanostructures were 1.5-2.5 <em>μ</em>m in height and their average diameter ranged from 100 to 300 nm.</p> |
| first_indexed | 2024-12-10T06:44:00Z |
| format | Article |
| id | doaj.art-8a090364c1a2412699a739f9f609746b |
| institution | Directory Open Access Journal |
| issn | 1729-4428 2309-8589 |
| language | English |
| last_indexed | 2024-12-10T06:44:00Z |
| publishDate | 2019-10-01 |
| publisher | Vasyl Stefanyk Precarpathian National University |
| record_format | Article |
| series | Фізика і хімія твердого тіла |
| spelling | doaj.art-8a090364c1a2412699a739f9f609746b2022-12-22T01:58:43ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892019-10-0120323423810.15330/pcss.20.3.234-2383246Optimal Conditions for the Deposition of Gold Nanofilms on a Silicon by Galvanic Replacement MethodS. I. Nichkalo0M. V. Shepida1M. V. Chekaylo2Національний університет “Львівська політехніка”Національний університет “Львівська політехніка”Національний університет “Львівська політехніка”<p class="1">The formation conditions of gold nanofilms on a silicon (Si) substrate by galvanic replacement in a dimethyl sulfoxide (DMSO) solvent and their subsequent use for the fabrication of Si nanostructures by metal-assisted chemical etching (MACE) method were under study. We found that the average size and number of Au nanoparticles increase with an increase in the reducible metal ion concentration from 2 to 8 mM HAuCl<sub>4</sub> in DMSO, whereas the distribution of Au nanoparticles in height remains low for all concentrations of the reducible metal. In the temperature range 40-70 °C, a different morphology of the deposited Au nanofilms observed. In particular, at 40 °C, the film is porous mainly homogeneous, whereas at a temperature of 50 °C the film is rougher. The subsequent rise in temperature from 60 °C to 70 °C results in the formation of Au nanofilm with a discontinuous morphology. It was established that regardless of the morphology of deposited Au nanofilms, the Si nanostructures maintain a vertical orientation to the plane of the Si substrate during MACE-etching. The produced Si nanostructures were 1.5-2.5 <em>μ</em>m in height and their average diameter ranged from 100 to 300 nm.</p>http://journals.pu.if.ua/index.php/pcss/article/view/3908гальванічне заміщеннянаночастинкиплівки золотананоструктури кремніюметал-каталітичне хімічне травлення |
| spellingShingle | S. I. Nichkalo M. V. Shepida M. V. Chekaylo Optimal Conditions for the Deposition of Gold Nanofilms on a Silicon by Galvanic Replacement Method Фізика і хімія твердого тіла гальванічне заміщення наночастинки плівки золота наноструктури кремнію метал-каталітичне хімічне травлення |
| title | Optimal Conditions for the Deposition of Gold Nanofilms on a Silicon by Galvanic Replacement Method |
| title_full | Optimal Conditions for the Deposition of Gold Nanofilms on a Silicon by Galvanic Replacement Method |
| title_fullStr | Optimal Conditions for the Deposition of Gold Nanofilms on a Silicon by Galvanic Replacement Method |
| title_full_unstemmed | Optimal Conditions for the Deposition of Gold Nanofilms on a Silicon by Galvanic Replacement Method |
| title_short | Optimal Conditions for the Deposition of Gold Nanofilms on a Silicon by Galvanic Replacement Method |
| title_sort | optimal conditions for the deposition of gold nanofilms on a silicon by galvanic replacement method |
| topic | гальванічне заміщення наночастинки плівки золота наноструктури кремнію метал-каталітичне хімічне травлення |
| url | http://journals.pu.if.ua/index.php/pcss/article/view/3908 |
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