Low temperature multi-differential operational amplifier
A multi-differential operational amplifier, called OAmp3, designed for operation at temperatures up to minus 197 °С and developed on bipolar transistors and junction field-effect transistors of the master slice array МН2ХА030, is considered in the article. The circuitry features of the OAmp3 allow,...
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2021-08-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/3137 |
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| author | O. V. Dvornikov V. A. Tchekhovski V. L. Dziatlau A. V. Kunts N. N. Prokopenko |
| author_facet | O. V. Dvornikov V. A. Tchekhovski V. L. Dziatlau A. V. Kunts N. N. Prokopenko |
| author_sort | O. V. Dvornikov |
| collection | DOAJ |
| description | A multi-differential operational amplifier, called OAmp3, designed for operation at temperatures up to minus 197 °С and developed on bipolar transistors and junction field-effect transistors of the master slice array МН2ХА030, is considered in the article. The circuitry features of the OAmp3 allow, due to the use of various negative feedback circuits, to implement a set of functions necessary for signal processing on a single amplifier: amplification (or current – voltage conversion), filtering, shift of the constant output voltage level. The performed measurements of OAmp3, connected as instrumentation amplifier circuit, showed that all manufactured products retain their performance in the temperature range from minus 150 °С to 20 °С, and individual samples – at minus 197 °С. It was found that the main reason for the loss of OAmp3 performance is an increase of the resistance of semiconductor resistors by almost 5.4 times at minus 197 °С compared to normal conditions and decrease in the junction field-effect transistor drain current. Together, these factors lead to decrease in the current consumption of the OAmp3 by almost 31 times at minus 180 °С compared to normal conditions. To reduce the temperature dependence of the current consumption and, thus, save the OAmp3 operability at low temperatures without changing the technological route of integrated circuits manufacturing, it is proposed to replace high-resistance semiconductor resistors with “pinch-resistors” formed on a small-signal p-junction field-effect transistor. The article presents the OAmp3 connection circuit in the form of an instrumental amplifier, the method and results of low-temperature measurements of experimental samples. |
| first_indexed | 2024-04-10T03:11:19Z |
| format | Article |
| id | doaj.art-8a3d6e8e72e84e61bfd2a8ed6afc8b1b |
| institution | Directory Open Access Journal |
| issn | 1729-7648 |
| language | Russian |
| last_indexed | 2024-04-10T03:11:19Z |
| publishDate | 2021-08-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj.art-8a3d6e8e72e84e61bfd2a8ed6afc8b1b2023-03-13T07:33:22ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482021-08-01195526010.35596/1729-7648-2021-19-5-52-601721Low temperature multi-differential operational amplifierO. V. Dvornikov0V. A. Tchekhovski1V. L. Dziatlau2A. V. Kunts3N. N. Prokopenko4Minsk Research Instrument-Making Institute JSC (MNIPI JSC)Institute for Nuclear Problems of Belarusian State UniversityInstitute for Nuclear Problems of Belarusian State UniversityInstitute for Nuclear Problems of Belarusian State University; Belarusian State University of Informatics and RadioelectronicsDon State Technical UniversityA multi-differential operational amplifier, called OAmp3, designed for operation at temperatures up to minus 197 °С and developed on bipolar transistors and junction field-effect transistors of the master slice array МН2ХА030, is considered in the article. The circuitry features of the OAmp3 allow, due to the use of various negative feedback circuits, to implement a set of functions necessary for signal processing on a single amplifier: amplification (or current – voltage conversion), filtering, shift of the constant output voltage level. The performed measurements of OAmp3, connected as instrumentation amplifier circuit, showed that all manufactured products retain their performance in the temperature range from minus 150 °С to 20 °С, and individual samples – at minus 197 °С. It was found that the main reason for the loss of OAmp3 performance is an increase of the resistance of semiconductor resistors by almost 5.4 times at minus 197 °С compared to normal conditions and decrease in the junction field-effect transistor drain current. Together, these factors lead to decrease in the current consumption of the OAmp3 by almost 31 times at minus 180 °С compared to normal conditions. To reduce the temperature dependence of the current consumption and, thus, save the OAmp3 operability at low temperatures without changing the technological route of integrated circuits manufacturing, it is proposed to replace high-resistance semiconductor resistors with “pinch-resistors” formed on a small-signal p-junction field-effect transistor. The article presents the OAmp3 connection circuit in the form of an instrumental amplifier, the method and results of low-temperature measurements of experimental samples.https://doklady.bsuir.by/jour/article/view/3137operational amplifiercryogenic electronicsmaster slice arraysensor analog interface |
| spellingShingle | O. V. Dvornikov V. A. Tchekhovski V. L. Dziatlau A. V. Kunts N. N. Prokopenko Low temperature multi-differential operational amplifier Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki operational amplifier cryogenic electronics master slice array sensor analog interface |
| title | Low temperature multi-differential operational amplifier |
| title_full | Low temperature multi-differential operational amplifier |
| title_fullStr | Low temperature multi-differential operational amplifier |
| title_full_unstemmed | Low temperature multi-differential operational amplifier |
| title_short | Low temperature multi-differential operational amplifier |
| title_sort | low temperature multi differential operational amplifier |
| topic | operational amplifier cryogenic electronics master slice array sensor analog interface |
| url | https://doklady.bsuir.by/jour/article/view/3137 |
| work_keys_str_mv | AT ovdvornikov lowtemperaturemultidifferentialoperationalamplifier AT vatchekhovski lowtemperaturemultidifferentialoperationalamplifier AT vldziatlau lowtemperaturemultidifferentialoperationalamplifier AT avkunts lowtemperaturemultidifferentialoperationalamplifier AT nnprokopenko lowtemperaturemultidifferentialoperationalamplifier |