White Light Emission from RF-Sputtered BaWO4:Dy3+ Thin Films
Radio frequency (RF)-sputtered white-light-emitting BaWO _4 :Dy ^3+ thin films were deposited at four different temperatures for application in electroluminescence devices and displays. All thin films crystallized to achieve a tetragonal structure with a dominant BaWO _4 (112) diffraction peak, irre...
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Format: | Article |
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IOP Publishing
2022-01-01
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Series: | ECS Advances |
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Online Access: | https://doi.org/10.1149/2754-2734/ac4da1 |
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author | Shinho Cho |
author_facet | Shinho Cho |
author_sort | Shinho Cho |
collection | DOAJ |
description | Radio frequency (RF)-sputtered white-light-emitting BaWO _4 :Dy ^3+ thin films were deposited at four different temperatures for application in electroluminescence devices and displays. All thin films crystallized to achieve a tetragonal structure with a dominant BaWO _4 (112) diffraction peak, irrespective of growth temperature. Two types of trapezoid grains with average sizes of approximately 250 and 530 nm evolved at a deposition temperature of 100 °C. Upon 234 nm excitation, the two main emission spectra of the BaWO _4 :Dy ^3+ thin films exhibited a 572 nm yellow band arising from the ^4 F _9/2 → ^6 H _13/2 transition and a 477 nm blue line resulting from the ^4 F _9/2 → ^6 H _15/2 transition of Dy ^3+ . As the growth temperature increased, the emission intensities of all bands increased slowly, approached a maximum at 300 °C, and then decreased markedly at 400 °C, with a chromaticity coordinates of (0.314, 0.361), a band gap of 4.56 eV, and a transmittance of 98%. These results indicate that the white-light emission of RF-sputtered BaWO _4 :Dy ^3+ thin films can be fully realized by varying the growth temperature. |
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spelling | doaj.art-8a409d01649749fb9636e7b5c3adcfc32023-03-08T15:12:01ZengIOP PublishingECS Advances2754-27342022-01-011101500110.1149/2754-2734/ac4da1White Light Emission from RF-Sputtered BaWO4:Dy3+ Thin FilmsShinho Cho0https://orcid.org/0000-0002-2849-188XDepartment of Materials Science and Engineering, Silla University , Busan 46958, KoreaRadio frequency (RF)-sputtered white-light-emitting BaWO _4 :Dy ^3+ thin films were deposited at four different temperatures for application in electroluminescence devices and displays. All thin films crystallized to achieve a tetragonal structure with a dominant BaWO _4 (112) diffraction peak, irrespective of growth temperature. Two types of trapezoid grains with average sizes of approximately 250 and 530 nm evolved at a deposition temperature of 100 °C. Upon 234 nm excitation, the two main emission spectra of the BaWO _4 :Dy ^3+ thin films exhibited a 572 nm yellow band arising from the ^4 F _9/2 → ^6 H _13/2 transition and a 477 nm blue line resulting from the ^4 F _9/2 → ^6 H _15/2 transition of Dy ^3+ . As the growth temperature increased, the emission intensities of all bands increased slowly, approached a maximum at 300 °C, and then decreased markedly at 400 °C, with a chromaticity coordinates of (0.314, 0.361), a band gap of 4.56 eV, and a transmittance of 98%. These results indicate that the white-light emission of RF-sputtered BaWO _4 :Dy ^3+ thin films can be fully realized by varying the growth temperature.https://doi.org/10.1149/2754-2734/ac4da1Numbers: 61.10.Nz68.60.-p81.40.GHX-ray diffractionSputteringThin film |
spellingShingle | Shinho Cho White Light Emission from RF-Sputtered BaWO4:Dy3+ Thin Films ECS Advances Numbers: 61.10.Nz 68.60.-p 81.40.GH X-ray diffraction Sputtering Thin film |
title | White Light Emission from RF-Sputtered BaWO4:Dy3+ Thin Films |
title_full | White Light Emission from RF-Sputtered BaWO4:Dy3+ Thin Films |
title_fullStr | White Light Emission from RF-Sputtered BaWO4:Dy3+ Thin Films |
title_full_unstemmed | White Light Emission from RF-Sputtered BaWO4:Dy3+ Thin Films |
title_short | White Light Emission from RF-Sputtered BaWO4:Dy3+ Thin Films |
title_sort | white light emission from rf sputtered bawo4 dy3 thin films |
topic | Numbers: 61.10.Nz 68.60.-p 81.40.GH X-ray diffraction Sputtering Thin film |
url | https://doi.org/10.1149/2754-2734/ac4da1 |
work_keys_str_mv | AT shinhocho whitelightemissionfromrfsputteredbawo4dy3thinfilms |