White Light Emission from RF-Sputtered BaWO4:Dy3+ Thin Films
Radio frequency (RF)-sputtered white-light-emitting BaWO _4 :Dy ^3+ thin films were deposited at four different temperatures for application in electroluminescence devices and displays. All thin films crystallized to achieve a tetragonal structure with a dominant BaWO _4 (112) diffraction peak, irre...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2022-01-01
|
| Series: | ECS Advances |
| Subjects: | |
| Online Access: | https://doi.org/10.1149/2754-2734/ac4da1 |
| _version_ | 1811158080502628352 |
|---|---|
| author | Shinho Cho |
| author_facet | Shinho Cho |
| author_sort | Shinho Cho |
| collection | DOAJ |
| description | Radio frequency (RF)-sputtered white-light-emitting BaWO _4 :Dy ^3+ thin films were deposited at four different temperatures for application in electroluminescence devices and displays. All thin films crystallized to achieve a tetragonal structure with a dominant BaWO _4 (112) diffraction peak, irrespective of growth temperature. Two types of trapezoid grains with average sizes of approximately 250 and 530 nm evolved at a deposition temperature of 100 °C. Upon 234 nm excitation, the two main emission spectra of the BaWO _4 :Dy ^3+ thin films exhibited a 572 nm yellow band arising from the ^4 F _9/2 → ^6 H _13/2 transition and a 477 nm blue line resulting from the ^4 F _9/2 → ^6 H _15/2 transition of Dy ^3+ . As the growth temperature increased, the emission intensities of all bands increased slowly, approached a maximum at 300 °C, and then decreased markedly at 400 °C, with a chromaticity coordinates of (0.314, 0.361), a band gap of 4.56 eV, and a transmittance of 98%. These results indicate that the white-light emission of RF-sputtered BaWO _4 :Dy ^3+ thin films can be fully realized by varying the growth temperature. |
| first_indexed | 2024-04-10T05:18:17Z |
| format | Article |
| id | doaj.art-8a409d01649749fb9636e7b5c3adcfc3 |
| institution | Directory Open Access Journal |
| issn | 2754-2734 |
| language | English |
| last_indexed | 2024-04-10T05:18:17Z |
| publishDate | 2022-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | ECS Advances |
| spelling | doaj.art-8a409d01649749fb9636e7b5c3adcfc32023-03-08T15:12:01ZengIOP PublishingECS Advances2754-27342022-01-011101500110.1149/2754-2734/ac4da1White Light Emission from RF-Sputtered BaWO4:Dy3+ Thin FilmsShinho Cho0https://orcid.org/0000-0002-2849-188XDepartment of Materials Science and Engineering, Silla University , Busan 46958, KoreaRadio frequency (RF)-sputtered white-light-emitting BaWO _4 :Dy ^3+ thin films were deposited at four different temperatures for application in electroluminescence devices and displays. All thin films crystallized to achieve a tetragonal structure with a dominant BaWO _4 (112) diffraction peak, irrespective of growth temperature. Two types of trapezoid grains with average sizes of approximately 250 and 530 nm evolved at a deposition temperature of 100 °C. Upon 234 nm excitation, the two main emission spectra of the BaWO _4 :Dy ^3+ thin films exhibited a 572 nm yellow band arising from the ^4 F _9/2 → ^6 H _13/2 transition and a 477 nm blue line resulting from the ^4 F _9/2 → ^6 H _15/2 transition of Dy ^3+ . As the growth temperature increased, the emission intensities of all bands increased slowly, approached a maximum at 300 °C, and then decreased markedly at 400 °C, with a chromaticity coordinates of (0.314, 0.361), a band gap of 4.56 eV, and a transmittance of 98%. These results indicate that the white-light emission of RF-sputtered BaWO _4 :Dy ^3+ thin films can be fully realized by varying the growth temperature.https://doi.org/10.1149/2754-2734/ac4da1Numbers: 61.10.Nz68.60.-p81.40.GHX-ray diffractionSputteringThin film |
| spellingShingle | Shinho Cho White Light Emission from RF-Sputtered BaWO4:Dy3+ Thin Films ECS Advances Numbers: 61.10.Nz 68.60.-p 81.40.GH X-ray diffraction Sputtering Thin film |
| title | White Light Emission from RF-Sputtered BaWO4:Dy3+ Thin Films |
| title_full | White Light Emission from RF-Sputtered BaWO4:Dy3+ Thin Films |
| title_fullStr | White Light Emission from RF-Sputtered BaWO4:Dy3+ Thin Films |
| title_full_unstemmed | White Light Emission from RF-Sputtered BaWO4:Dy3+ Thin Films |
| title_short | White Light Emission from RF-Sputtered BaWO4:Dy3+ Thin Films |
| title_sort | white light emission from rf sputtered bawo4 dy3 thin films |
| topic | Numbers: 61.10.Nz 68.60.-p 81.40.GH X-ray diffraction Sputtering Thin film |
| url | https://doi.org/10.1149/2754-2734/ac4da1 |
| work_keys_str_mv | AT shinhocho whitelightemissionfromrfsputteredbawo4dy3thinfilms |