Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors

Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors

The effects of various oxygen flows on indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) with different channel width sizes have been investigated. The IGZO nano-films exhibited amorphous phase while the bandgap energy and sheet resistance increased with increasing oxygen flow rate...

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Bibliographic Details
Main Authors:	Gwomei Wu, Anup K. Sahoo
Format:	Article
Language:	English
Published:	MDPI AG 2020-11-01
Series:	Nanomaterials
Subjects:	IGZO TFT oxygen flow channel width electrical property
Online Access:	https://www.mdpi.com/2079-4991/10/12/2357

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