Investigation of V1-xTixFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic Characteristics
<span>The peculiarities of the temperature and concentration characteristics of resistivity and thermopower of V1-xTixFeSb semiconductor solid solution were investigated in the temperature and concentration ranges of T = 4.2 -400 K and Ті ≈ 9.5•1019–3.6•1021 см-3 (х = 0.005 - 0.20), respective...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Vasyl Stefanyk Precarpathian National University
2016-03-01
|
| Series: | Фізика і хімія твердого тіла |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/721 |
| _version_ | 1798045243929526272 |
|---|---|
| author | V. A. Romaka P. Rogl Yu. V. Stadnyk L. P. Romaka R. O. Korzh D. Kaczorowski V. Ya. Krayovskyy A. M. Нoryn |
| author_facet | V. A. Romaka P. Rogl Yu. V. Stadnyk L. P. Romaka R. O. Korzh D. Kaczorowski V. Ya. Krayovskyy A. M. Нoryn |
| author_sort | V. A. Romaka |
| collection | DOAJ |
| description | <span>The peculiarities of the temperature and concentration characteristics of resistivity and thermopower of V1-xTixFeSb semiconductor solid solution were investigated in the temperature and concentration ranges of T = 4.2 -400 K and Ті ≈ 9.5•1019–3.6•1021 см-3 (х = 0.005 - 0.20), respectively. The existence of previously unknown mechanism for the generation of structural defects with donor nature which determined the conduction of n-VFeSb and V1-xTixFeSb was established. The acceptor type of structural defects generated in V1-xTixFeSb by substitution of V atoms by Ti ones was confirmed. </span><br /><strong>Keywords:</strong><span> semiconductor, electrical conduction, electronic structure.</span> |
| first_indexed | 2024-04-11T23:19:04Z |
| format | Article |
| id | doaj.art-8a875983ed6e4f08b8d7180706c60abd |
| institution | Directory Open Access Journal |
| issn | 1729-4428 2309-8589 |
| language | English |
| last_indexed | 2024-04-11T23:19:04Z |
| publishDate | 2016-03-01 |
| publisher | Vasyl Stefanyk Precarpathian National University |
| record_format | Article |
| series | Фізика і хімія твердого тіла |
| spelling | doaj.art-8a875983ed6e4f08b8d7180706c60abd2022-12-22T03:57:32ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892016-03-0116111111510.15330/pcss.16.1.111-115590Investigation of V1-xTixFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic CharacteristicsV. A. Romaka0P. Rogl1Yu. V. Stadnyk2L. P. Romaka3R. O. Korzh4D. Kaczorowski5V. Ya. Krayovskyy6A. M. Нoryn7Інститут прикладних проблем механіки і математики ім. Я. Підстригача НАН УкраїниІнститут фізичної хімії Віденського університетуЛьвівський національний університет ім. І.ФранкаЛьвівський національний університет ім. І.ФранкаНаціональний університет “Львівська політехніка”Інститут низьких температур і структурних досліджень Польської Академії наукНаціональний університет “Львівська політехнікаЛьвівський національний університет ім. І.Франка<span>The peculiarities of the temperature and concentration characteristics of resistivity and thermopower of V1-xTixFeSb semiconductor solid solution were investigated in the temperature and concentration ranges of T = 4.2 -400 K and Ті ≈ 9.5•1019–3.6•1021 см-3 (х = 0.005 - 0.20), respectively. The existence of previously unknown mechanism for the generation of structural defects with donor nature which determined the conduction of n-VFeSb and V1-xTixFeSb was established. The acceptor type of structural defects generated in V1-xTixFeSb by substitution of V atoms by Ti ones was confirmed. </span><br /><strong>Keywords:</strong><span> semiconductor, electrical conduction, electronic structure.</span>http://journals.pu.if.ua/index.php/pcss/article/view/721 |
| spellingShingle | V. A. Romaka P. Rogl Yu. V. Stadnyk L. P. Romaka R. O. Korzh D. Kaczorowski V. Ya. Krayovskyy A. M. Нoryn Investigation of V1-xTixFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic Characteristics Фізика і хімія твердого тіла |
| title | Investigation of V1-xTixFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic Characteristics |
| title_full | Investigation of V1-xTixFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic Characteristics |
| title_fullStr | Investigation of V1-xTixFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic Characteristics |
| title_full_unstemmed | Investigation of V1-xTixFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic Characteristics |
| title_short | Investigation of V1-xTixFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic Characteristics |
| title_sort | investigation of v1 xtixfesb semiconductor solid solution i peculiarities of electrokinetic characteristics |
| url | http://journals.pu.if.ua/index.php/pcss/article/view/721 |
| work_keys_str_mv | AT varomaka investigationofv1xtixfesbsemiconductorsolidsolutionipeculiaritiesofelectrokineticcharacteristics AT progl investigationofv1xtixfesbsemiconductorsolidsolutionipeculiaritiesofelectrokineticcharacteristics AT yuvstadnyk investigationofv1xtixfesbsemiconductorsolidsolutionipeculiaritiesofelectrokineticcharacteristics AT lpromaka investigationofv1xtixfesbsemiconductorsolidsolutionipeculiaritiesofelectrokineticcharacteristics AT rokorzh investigationofv1xtixfesbsemiconductorsolidsolutionipeculiaritiesofelectrokineticcharacteristics AT dkaczorowski investigationofv1xtixfesbsemiconductorsolidsolutionipeculiaritiesofelectrokineticcharacteristics AT vyakrayovskyy investigationofv1xtixfesbsemiconductorsolidsolutionipeculiaritiesofelectrokineticcharacteristics AT amnoryn investigationofv1xtixfesbsemiconductorsolidsolutionipeculiaritiesofelectrokineticcharacteristics |