Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edge
In this Letter, we report on demonstrating diamond avalanche diodes for obtaining a high-voltage pulse with a subnanosecond front edge. Under a 2.5 kV driving pulse, the diamond avalanche diodes show a 2.04 kV output and the front edge is 0.894 ns. After repetitive tests, the output voltage wave rem...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0009883 |
| _version_ | 1818060927286640640 |
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| author | Zhangcheng Liu Wenyang Yi Dan Zhao Haris Naeem Abbasi Tai Min Hong-Xing Wang |
| author_facet | Zhangcheng Liu Wenyang Yi Dan Zhao Haris Naeem Abbasi Tai Min Hong-Xing Wang |
| author_sort | Zhangcheng Liu |
| collection | DOAJ |
| description | In this Letter, we report on demonstrating diamond avalanche diodes for obtaining a high-voltage pulse with a subnanosecond front edge. Under a 2.5 kV driving pulse, the diamond avalanche diodes show a 2.04 kV output and the front edge is 0.894 ns. After repetitive tests, the output voltage wave remains almost the same, indicating good stability. By applying a reverse DC 100 V bias, the front edge shortens to be 0.675 ns, while the rectifier characteristics degrade and the output voltage is limited. Therefore, the reverse bias should be optimized to obtain both the fast front edge and high output voltage. The results show that diamond avalanche diodes have a promising application for high-voltage pulse sources. |
| first_indexed | 2024-12-10T13:40:11Z |
| format | Article |
| id | doaj.art-8aec1fd51c274b1caccb5d3942c50232 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-10T13:40:11Z |
| publishDate | 2020-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-8aec1fd51c274b1caccb5d3942c502322022-12-22T01:46:44ZengAIP Publishing LLCAIP Advances2158-32262020-06-01106065015065015-410.1063/5.0009883Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edgeZhangcheng Liu0Wenyang Yi1Dan Zhao2Haris Naeem Abbasi3Tai Min4Hong-Xing Wang5Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaKey Laboratory for Physical Electronics and Devices of the Ministry of Education, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaKey Laboratory for Physical Electronics and Devices of the Ministry of Education, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaKey Laboratory for Physical Electronics and Devices of the Ministry of Education, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaCenter for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaKey Laboratory for Physical Electronics and Devices of the Ministry of Education, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, ChinaIn this Letter, we report on demonstrating diamond avalanche diodes for obtaining a high-voltage pulse with a subnanosecond front edge. Under a 2.5 kV driving pulse, the diamond avalanche diodes show a 2.04 kV output and the front edge is 0.894 ns. After repetitive tests, the output voltage wave remains almost the same, indicating good stability. By applying a reverse DC 100 V bias, the front edge shortens to be 0.675 ns, while the rectifier characteristics degrade and the output voltage is limited. Therefore, the reverse bias should be optimized to obtain both the fast front edge and high output voltage. The results show that diamond avalanche diodes have a promising application for high-voltage pulse sources.http://dx.doi.org/10.1063/5.0009883 |
| spellingShingle | Zhangcheng Liu Wenyang Yi Dan Zhao Haris Naeem Abbasi Tai Min Hong-Xing Wang Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edge AIP Advances |
| title | Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edge |
| title_full | Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edge |
| title_fullStr | Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edge |
| title_full_unstemmed | Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edge |
| title_short | Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edge |
| title_sort | diamond avalanche diodes for obtaining high voltage pulse with subnanosecond front edge |
| url | http://dx.doi.org/10.1063/5.0009883 |
| work_keys_str_mv | AT zhangchengliu diamondavalanchediodesforobtaininghighvoltagepulsewithsubnanosecondfrontedge AT wenyangyi diamondavalanchediodesforobtaininghighvoltagepulsewithsubnanosecondfrontedge AT danzhao diamondavalanchediodesforobtaininghighvoltagepulsewithsubnanosecondfrontedge AT harisnaeemabbasi diamondavalanchediodesforobtaininghighvoltagepulsewithsubnanosecondfrontedge AT taimin diamondavalanchediodesforobtaininghighvoltagepulsewithsubnanosecondfrontedge AT hongxingwang diamondavalanchediodesforobtaininghighvoltagepulsewithsubnanosecondfrontedge |