Effects of Cold Plasma Treatment on Physical Modification and Endogenous Hormone Regulation in Enhancing Seed Germination and Radicle Growth of Mung Bean

This study investigated the effects of plasma duration and different reactive species ratios of cold atmospheric-pressure plasma treatment on both physical and endogenous hormone changes in enhancing the germination and growth of mung bean seeds. Seed germination and sprout stem length were signific...

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Bibliographic Details
Main Authors: Thi Quynh Xuan Le, Linh Nhat Nguyen, Thanh Tung Nguyen, Eun Ha Choi, Quang Liem Nguyen, Nagendra Kumar Kaushik, Nguyen Thuan Dao
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Applied Sciences
Subjects:
Online Access:https://www.mdpi.com/2076-3417/12/20/10308
Description
Summary:This study investigated the effects of plasma duration and different reactive species ratios of cold atmospheric-pressure plasma treatment on both physical and endogenous hormone changes in enhancing the germination and growth of mung bean seeds. Seed germination and sprout stem length were significantly enhanced after plasma treatment. The germination rate increased eleven times after 12 h, while the radicles’ length increased ~3 times after 96 h with optimal plasma treatment parameters. SEM images showed that the plasmas directly induced gradual changes in the seed coating, including deformed and shrunken epidermis, and cracks with sizes varying from 0.2 to 1.5 µm after 4 min of plasma treatment. Water contact angle was reduced from 73° with untreated seed to almost 0° with 4 min treated seed. These effects could lead to better water absorption on the surface of treated seeds. We found that a plasma energy dosage of 0.08 Wh per seed and NO concentration between 20–95 ppm were the optimal enhancement conditions. We also showed that, for the first time, through delicate extraction, separation, and quantification processes, NO-induced upregulation of the natural growth hormone gibberellic acid could be the dominant phytochemistry pathway responsible for the enhancement effect.
ISSN:2076-3417