355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors
Bottom-gate thin-film transistors (TFTs) with n-type amorphous indium-gallium-zinc oxide (a-IGZO) active channels and indium-tin oxide (ITO) source/drain electrodes were fabricated. Then, an ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was scanned to locally anneal the active...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-01-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/15/1/103 |
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| author | Sang Yeon Park Younggon Choi Yong Hyeok Seo Hojun Kim Dong Hyun Lee Phuoc Loc Truong Yongmin Jeon Hocheon Yoo Sang Jik Kwon Daeho Lee Eou-Sik Cho |
| author_facet | Sang Yeon Park Younggon Choi Yong Hyeok Seo Hojun Kim Dong Hyun Lee Phuoc Loc Truong Yongmin Jeon Hocheon Yoo Sang Jik Kwon Daeho Lee Eou-Sik Cho |
| author_sort | Sang Yeon Park |
| collection | DOAJ |
| description | Bottom-gate thin-film transistors (TFTs) with n-type amorphous indium-gallium-zinc oxide (a-IGZO) active channels and indium-tin oxide (ITO) source/drain electrodes were fabricated. Then, an ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was scanned to locally anneal the active channel at various laser powers. After laser annealing, negative shifts in the threshold voltages and enhanced on-currents were observed at laser powers ranging from 54 to 120 mW. The energy band gap and work function of a-IGZO extracted from the transmittance and ultraviolet photoelectron spectroscopy (UPS) measurement data confirm that different energy band structures for the ITO electrode/a-IGZO channel were established depending on the laser annealing conditions. Based on these observations, the electron injection mechanism from ITO electrodes to a-IGZO channels was analyzed. The results show that the selective laser annealing process can improve the electrical performance of the a-IGZO TFTs without any thermal damage to the substrate. |
| first_indexed | 2024-03-08T10:40:31Z |
| format | Article |
| id | doaj.art-8b0e7fbcbd3f454a8f976bc99e5625b5 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-08T10:40:31Z |
| publishDate | 2024-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-8b0e7fbcbd3f454a8f976bc99e5625b52024-01-26T17:44:49ZengMDPI AGMicromachines2072-666X2024-01-0115110310.3390/mi15010103355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film TransistorsSang Yeon Park0Younggon Choi1Yong Hyeok Seo2Hojun Kim3Dong Hyun Lee4Phuoc Loc Truong5Yongmin Jeon6Hocheon Yoo7Sang Jik Kwon8Daeho Lee9Eou-Sik Cho10Department of Electronics Engineering, Gachon University, Seongnam City 13120, Republic of KoreaDepartment of Electronics Engineering, Gachon University, Seongnam City 13120, Republic of KoreaDepartment of Electronics Engineering, Gachon University, Seongnam City 13120, Republic of KoreaDepartment of Mechanical Engineering, Gachon University, Seongnam City 13120, Republic of KoreaDepartment of Electronics Engineering, Gachon University, Seongnam City 13120, Republic of KoreaDepartment of Mechanical Engineering, Gachon University, Seongnam City 13120, Republic of KoreaDepartment of Biomedical Engineering, Gachon University, Seongnam City 13120, Republic of KoreaDepartment of Electronics Engineering, Gachon University, Seongnam City 13120, Republic of KoreaDepartment of Electronics Engineering, Gachon University, Seongnam City 13120, Republic of KoreaDepartment of Mechanical Engineering, Gachon University, Seongnam City 13120, Republic of KoreaDepartment of Electronics Engineering, Gachon University, Seongnam City 13120, Republic of KoreaBottom-gate thin-film transistors (TFTs) with n-type amorphous indium-gallium-zinc oxide (a-IGZO) active channels and indium-tin oxide (ITO) source/drain electrodes were fabricated. Then, an ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was scanned to locally anneal the active channel at various laser powers. After laser annealing, negative shifts in the threshold voltages and enhanced on-currents were observed at laser powers ranging from 54 to 120 mW. The energy band gap and work function of a-IGZO extracted from the transmittance and ultraviolet photoelectron spectroscopy (UPS) measurement data confirm that different energy band structures for the ITO electrode/a-IGZO channel were established depending on the laser annealing conditions. Based on these observations, the electron injection mechanism from ITO electrodes to a-IGZO channels was analyzed. The results show that the selective laser annealing process can improve the electrical performance of the a-IGZO TFTs without any thermal damage to the substrate.https://www.mdpi.com/2072-666X/15/1/103UV pulsed laser annealinga-IGZO TFTITO/IGZO energy band structureselective annealing |
| spellingShingle | Sang Yeon Park Younggon Choi Yong Hyeok Seo Hojun Kim Dong Hyun Lee Phuoc Loc Truong Yongmin Jeon Hocheon Yoo Sang Jik Kwon Daeho Lee Eou-Sik Cho 355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors Micromachines UV pulsed laser annealing a-IGZO TFT ITO/IGZO energy band structure selective annealing |
| title | 355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors |
| title_full | 355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors |
| title_fullStr | 355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors |
| title_full_unstemmed | 355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors |
| title_short | 355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors |
| title_sort | 355 nm nanosecond ultraviolet pulsed laser annealing effects on amorphous in ga zno thin film transistors |
| topic | UV pulsed laser annealing a-IGZO TFT ITO/IGZO energy band structure selective annealing |
| url | https://www.mdpi.com/2072-666X/15/1/103 |
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