355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors

355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors

Bottom-gate thin-film transistors (TFTs) with n-type amorphous indium-gallium-zinc oxide (a-IGZO) active channels and indium-tin oxide (ITO) source/drain electrodes were fabricated. Then, an ultraviolet (UV) nanosecond pulsed laser with a wavelength of 355 nm was scanned to locally anneal the active...

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Bibliographic Details
Main Authors: Sang Yeon Park, Younggon Choi, Yong Hyeok Seo, Hojun Kim, Dong Hyun Lee, Phuoc Loc Truong, Yongmin Jeon, Hocheon Yoo, Sang Jik Kwon, Daeho Lee, Eou-Sik Cho
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Micromachines
Subjects:
UV pulsed laser annealing
a-IGZO TFT
ITO/IGZO energy band structure
selective annealing
Online Access:https://www.mdpi.com/2072-666X/15/1/103

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