Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

This paper proposes a new technique to engineer the Fin channel in vertical GaN FinFET toward a straight and smooth channel sidewall. Consequently, the GaN wet etching in the TMAH solution is detailed; we found that the m-GaN plane has lower surface roughness than crystallographic planes with other...

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Bibliographic Details
Main Authors: Nedal Al Taradeh, Eric Frayssinet, Christophe Rodriguez, Frederic Morancho, Camille Sonneville, Luong-Viet Phung, Ali Soltani, Florian Tendille, Yvon Cordier, Hassan Maher
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Energies
Subjects:
vertical GaN FinFET
GaN etching
UV light
Tetramethylammonium hydroxide (TMAH)
ICP-RIE dry etching
channel sidewall engineering
Online Access:https://www.mdpi.com/1996-1073/14/14/4241

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