A 350-GHz Coupled Stack Oscillator with −0.8 dBm Output Power in 65-nm Bulk CMOS Process

A 350-GHz Coupled Stack Oscillator with −0.8 dBm Output Power in 65-nm Bulk CMOS Process

This paper presents a push-push coupled stack oscillator that achieves a high output power level at terahertz (THz) wave frequency. The proposed stack oscillator core adopts a frequency selective negative resistance topology to improve negative transconductance at the fundamental frequency and a tra...

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Bibliographic Details
Main Authors:	Thanh Dat Nguyen, Jong-Phil Hong
Format:	Article
Language:	English
Published:	MDPI AG 2020-07-01
Series:	Electronics
Subjects:	oscillator THz high output power CMOS
Online Access:	https://www.mdpi.com/2079-9292/9/8/1214

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