E-band widely tunable, narrow linewidth heterogeneous laser on silicon

We demonstrate a heterogeneously integrated laser on silicon exhibiting a sub-20 kHz Lorentzian linewidth over a wavelength tuning range of 58 nm from 1350 to 1408 nm, which are record values to date for E-band integrated lasers in the literature. Wide wavelength tuning is achieved with an integrate...

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Main Authors: Joel Guo, Chao Xiang, Theodore J. Morin, Jonathan D. Peters, Lin Chang, John E. Bowers
Format: Article
Language:English
Published: AIP Publishing LLC 2023-04-01
Series:APL Photonics
Online Access:http://dx.doi.org/10.1063/5.0133040
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author Joel Guo
Chao Xiang
Theodore J. Morin
Jonathan D. Peters
Lin Chang
John E. Bowers
author_facet Joel Guo
Chao Xiang
Theodore J. Morin
Jonathan D. Peters
Lin Chang
John E. Bowers
author_sort Joel Guo
collection DOAJ
description We demonstrate a heterogeneously integrated laser on silicon exhibiting a sub-20 kHz Lorentzian linewidth over a wavelength tuning range of 58 nm from 1350 to 1408 nm, which are record values to date for E-band integrated lasers in the literature. Wide wavelength tuning is achieved with an integrated Si ring-resonator-based Vernier mirror, which also significantly reduces the Lorentzian linewidth. Such a record performance leverages a mature heterogeneous III–V/Si platform and marks an important milestone in E-band optical fiber communications and in reaching visible wavelengths via second harmonic generation for optical atomic clock applications.
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spelling doaj.art-8b41890011c34653a5f2f380f45404922023-07-25T15:16:16ZengAIP Publishing LLCAPL Photonics2378-09672023-04-0184046114046114-610.1063/5.0133040E-band widely tunable, narrow linewidth heterogeneous laser on siliconJoel Guo0Chao Xiang1Theodore J. Morin2Jonathan D. Peters3Lin Chang4John E. Bowers5Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USADepartment of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USADepartment of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USADepartment of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USADepartment of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USADepartment of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USAWe demonstrate a heterogeneously integrated laser on silicon exhibiting a sub-20 kHz Lorentzian linewidth over a wavelength tuning range of 58 nm from 1350 to 1408 nm, which are record values to date for E-band integrated lasers in the literature. Wide wavelength tuning is achieved with an integrated Si ring-resonator-based Vernier mirror, which also significantly reduces the Lorentzian linewidth. Such a record performance leverages a mature heterogeneous III–V/Si platform and marks an important milestone in E-band optical fiber communications and in reaching visible wavelengths via second harmonic generation for optical atomic clock applications.http://dx.doi.org/10.1063/5.0133040
spellingShingle Joel Guo
Chao Xiang
Theodore J. Morin
Jonathan D. Peters
Lin Chang
John E. Bowers
E-band widely tunable, narrow linewidth heterogeneous laser on silicon
APL Photonics
title E-band widely tunable, narrow linewidth heterogeneous laser on silicon
title_full E-band widely tunable, narrow linewidth heterogeneous laser on silicon
title_fullStr E-band widely tunable, narrow linewidth heterogeneous laser on silicon
title_full_unstemmed E-band widely tunable, narrow linewidth heterogeneous laser on silicon
title_short E-band widely tunable, narrow linewidth heterogeneous laser on silicon
title_sort e band widely tunable narrow linewidth heterogeneous laser on silicon
url http://dx.doi.org/10.1063/5.0133040
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