Behaviour of Microwave-Heated Al<sub>4</sub>SiC<sub>4</sub> at 2.45 GHz

The ongoing development of high-temperature processes with the use of microwaves requires new microwave absorbers that are useful at these temperatures. In this study, we propose Al<sub>4</sub>SiC<sub>4</sub> powders as important and efficient microwave absorbers. We investig...

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Bibliographic Details
Main Authors: Takashi Fujii, Akio Oshita, Keiichiro Kashimura
Format: Article
Language:English
Published: MDPI AG 2021-08-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/14/17/4878
Description
Summary:The ongoing development of high-temperature processes with the use of microwaves requires new microwave absorbers that are useful at these temperatures. In this study, we propose Al<sub>4</sub>SiC<sub>4</sub> powders as important and efficient microwave absorbers. We investigated both the behavioural microwave heating and electrical permittivity characteristics of Al<sub>4</sub>SiC<sub>4</sub> powders with various particle sizes at 2.45 GHz. The TE<sub>103</sub> single-mode cavity indicated that Al<sub>4</sub>SiC<sub>4</sub> powder samples yielded different heating behaviours and dielectric constants for each particle size compared with SiC. By microwave heating ∅50 mm × 5 mm disks of Al<sub>4</sub>SiC<sub>4</sub> and SiC, we demonstrate that for specific sizes, Al<sub>4</sub>SiC<sub>4</sub> can be heated at a higher temperature than SiC. Finally, the results of the two-dimensional two-colour thermometer show that an energy concentration appears at the interface of the microwave-heated Al<sub>4</sub>SiC<sub>4</sub>. These phenomena, which are inconsistent in individual physical property values, can be explained without contradicting microwave heating physics.
ISSN:1996-1944